143 research outputs found
Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs
We demonstrate radio frequency (RF) readout of electrically detected magnetic
resonance in phosphorus-doped silicon metal-oxide field-effecttransistors
(MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P
hyperfine lines have been observed using radio frequency reflectometry, which
is promising for high-bandwidth operation and possibly time-resolved detection
of spin resonance in donor-based semiconductor devices. Here we present the
effect of microwave (MW) power and MOSFET biasing conditions on the EDMR
signals.Comment: 2 pages, 3 figure
Electrically detected magnetic resonance using radio-frequency reflectometry
The authors demonstrate readout of electrically detected magnetic resonance
at radio frequencies by means of an LCR tank circuit. Applied to a silicon
field-effect transistor at milli-kelvin temperatures, this method shows a
25-fold increased signal-to-noise ratio of the conduction band electron spin
resonance and a higher operational bandwidth of > 300 kHz compared to the kHz
bandwidth of conventional readout techniques. This increase in temporal
resolution provides a method for future direct observations of spin dynamics in
the electrical device characteristics.Comment: 9 pages, 3 figure
Observation of the single-electron regime in a highly tunable silicon quantum dot
We report on low-temperature electronic transport measurements of a silicon
metal-oxide-semiconductor quantum dot, with independent gate control of
electron densities in the leads and the quantum dot island. This architecture
allows the dot energy levels to be probed without affecting the electron
density in the leads, and vice versa. Appropriate gate biasing enables the dot
occupancy to be reduced to the single-electron level, as evidenced by
magnetospectroscopy measurements of the ground state of the first two charge
transitions. Independent gate control of the electron reservoirs also enables
discrimination between excited states of the dot and density of states
modulations in the leads.Comment: 4 pages, 3 figures, accepted for Applied Physics Letter
Coplanar stripline antenna design for optically detected magnetic resonance on semiconductor quantum dots
We report on the development and testing of a coplanar stripline antenna that
is designed for integration in a magneto-photoluminescence experiment to allow
coherent control of individual electron spins confined in single self-assembled
semiconductor quantum dots. We discuss the design criteria for such a structure
which is multi-functional in the sense that it serves not only as microwave
delivery but also as electrical top gate and shadow mask for the single quantum
dot spectroscopy. We present test measurements on hydrogenated amorphous
silicon, demonstrating electrically detected magnetic resonance using the
in-plane component of the oscillating magnetic field created by the coplanar
stripline antenna necessary due to the particular geometry of the quantum dot
spectroscopy. From reference measurements using a commercial electron spin
resonance setup in combination with finite element calculations simulating the
field distribution in the structure, we obtain an average magnetic field of
~0.2mT at the position where the quantum dots would be integrated into the
device. The corresponding pi-pulse time of ~0.3us fully meets the requirements
set by the high sensitivity optical spin read-out scheme developed for the
quantum dot
Observation of extremely slow hole spin relaxation in self-assembled quantum dots
We report the measurement of extremely slow hole spin relaxation dynamics in
small ensembles of self-assembled InGaAs quantum dots. Individual spin
orientated holes are optically created in the lowest orbital state of each dot
and read out after a defined storage time using spin memory devices. The
resulting luminescence signal exhibits a pronounced polarization memory effect
that vanishes for long storage times. The hole spin relaxation dynamics are
measured as a function of external magnetic field and lattice temperature. We
show that hole spin relaxation can occur over remarkably long timescales in
strongly confined quantum dots (up to ~270 us), as predicted by recent theory.
Our findings are supported by calculations that reproduce both the observed
magnetic field and temperature dependencies. The results suggest that hole spin
relaxation in strongly confined quantum dots is due to spin orbit mediated
phonon scattering between Zeeman levels, in marked contrast to higher
dimensional nanostructures where it is limited by valence band mixing.Comment: Published by Physical Review
Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
We present the results of electrically-detected magnetic resonance (EDMR)
experiments on silicon with ion-implanted phosphorus nanostructures, performed
at 5 K. The devices consist of high-dose implanted metallic leads with a square
gap, into which Phosphorus is implanted at a non-metallic dose corresponding to
10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region,
the EDMR signal from less than 100 donors is detected. This technique provides
a pathway to the study of single donor spins in semiconductors, which is
relevant to a number of proposals for quantum information processing.Comment: 9 pages, 3 figure
Acoustically driven ferromagnetic resonance
Surface acoustic waves (SAW) in the GHz frequency range are exploited for the
all-elastic excitation and detection of ferromagnetic resonance (FMR) in a
ferromagnetic/ferroelectric (nickel/lithium niobate) hybrid device. We measure
the SAW magneto-transmission at room temperature as a function of frequency,
external magnetic field magnitude, and orientation. Our data are well described
by a modified Landau-Lifshitz-Gilbert approach, in which a virtual,
strain-induced tickle field drives the magnetization precession. This causes a
distinct magnetic field orientation dependence of elastically driven FMR that
we observe in both model and experiment.Comment: 4 page
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