Temperature at Horizon in de Sitter Spacetime

It is found that there is no period in the imaginary Beltrami-time of the de Sitter spacetime with Beltrami metric and that the `surface-gravity' in view of inertial observers in de Sitter spacetime is zero! They show that the horizon might be at zero temperature in de Sitter spacetime and that the thermal property of the horizon in the de Sitter spacetime with a static metric should be analogous to that of the Rindler horizon in Minkowski spacetime.Comment: 7 pages, 1 figur

Anion-exchange synthesis of thermoelectric layered SnS0.1Se0.9-xTex nano/microstructures in aqueous solution; complexity and carrier concentration

Nanostructured SnS0.1Se0.9-xTex (x = 0.02, 0.05, 0.08) quaternary chalcogenides have been controllably synthesised via a facile solution-processable anion-exchange method. All the products exist as “flower-like” architectures assembled from individual nano/microplates that are each hundreds of nanometers in thickness and several micrometers in lateral size. This morphology is essentially preserved from the original SnS starting material. Spark plasma sintering (SPS) not only consolidates the as-prepared powder samples, but also eliminates secondary phases, leading to pellets of phase-pure SnS0.1Se0.9-xTex solid solution members. The electrical conductivity of SnS0.1Se0.88Te0.02 is significantly enhanced over the Te-free material in the low-temperature range, achieving a peak value of ≈5760 S m-1 at 373 K, which is ≈41% higher than SnS0.1Se0.9 at the same temperature. Also possessing a high Seebeck coefficient, SnS0.1Se0.88Te0.02 exhibits a maximum power factor (ca. 0.54 mW m-1 K-2) at 423 K. The thermoelectric performance of SnS0.1Se0.9-xTex has been optimised through modifying the Te concentration, leading to a peak ZT of ≈0.43 for SnS0.1Se0.88Te0.02 at 773 K. This robust, scalable and surfactant-free approach paves the way to engineer increasingly complex (in this case, quaternary) metal chalcogenides controllably in aqueous solution

On Beltrami Model of de Sitter Spacetime

Based on some important properties of $dS$ space, we present a Beltrami model ${\cal B}_\Lambda$ that may shed light on the observable puzzle of $dS$ space and the paradox between the special relativity principle and cosmological principle. In ${\cal B}_\Lambda$, there are inertial-type coordinates and inertial-type observers. Thus, the classical observables can be defined for test particles and light signals. In addition, by choosing the definition of simultaneity the Beltrami metric is transformed to the Robertson-Walker-like metric. It is of positive spatial curvature of order $\Lambda$. This is more or less indicated already by the CMB power spectrum from WMAP and should be further confirmed by its data in large scale.Comment: 4 page

Snyder's Model -- de Sitter Special Relativity Duality and de Sitter Gravity

Between Snyder's quantized space-time model in de Sitter space of momenta and the \dS special relativity on \dS-spacetime of radius $R$ with Beltrami coordinates, there is a one-to-one dual correspondence supported by a minimum uncertainty-like argument. Together with Planck length $\ell_P$, $R\simeq (3/\Lambda)^{1/2}$ should be a fundamental constant. They lead to a dimensionless constant $g{\sim\ell_PR^{-1}}=(G\hbar c^{-3}\Lambda/3)^{1/2}\sim 10^{-61}$. These indicate that physics at these two scales should be dual to each other and there is in-between gravity of local \dS-invariance characterized by $g$. A simple model of \dS-gravity with a gauge-like action on umbilical manifolds may show these characters. It can pass the observation tests and support the duality.Comment: 32 page

Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module

Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. Silicon carbide (SiC) IGBT, represented by SiC MOSFET, combines the excellent performance of SiC materials and IGBT devices, and becomes an ideal device for high-frequency and high-temperature electronic devices. Even so, the thermal fatigue failure of SiC IGBT, which directly determines its application and promotion, is a problem worthy of attention. In this study, the thermal fatigue behavior of SiC-IGBT under cyclic temperature cycles was investigated by finite element method. The finite element thermomechanical model was established, and stress-strain distribution and creep characteristics of the SnAgCu solder layer were obtained. The thermal fatigue life of the solder was predicted by the creep, shear strain and energy model respectively, and the failure position and factor of failure were discussed