Size-dependent response of ultra-thin films with surface effects

AbstractA modified continuum model of elastic films with nano-scale thickness is proposed by incorporating surface elasticity into the conventional nonlinear Von Karman plate theory. By using Hamilton’s principle, the governing equations and boundary conditions of the ultra-thin film including surface effects are derived within the Kirchhoff’s assumption, where the effects of non-zero normal stress and large deflection are taken into account simultaneously. The present model is then applied to studying the bending, buckling and free vibration of simply supported micro/nano-scale thin films in-plane strains and explicit exact solutions can be obtained for these three cases. The size-dependent mechanical behavior of the thin film due to surface effects is well elucidated in the obtained solutions

Fabrication of thin film solar cell materials by APCVD

Thin film solar cells are currently being implemented commercially as they reduce the amount of semiconductor material required for each cell when compared to silicon wafers, thereby lowering the cost of production. Currently two direct band gap chalcogenide thin-film technologies, CdTe and CuInGa(S,Se)2 (CIGS), yield the highest reported power conversion efficiencies of 16.5% and 20.3%, respectively. In addition, Cu2ZnSnS4 (CZTS) is one of the most promising chalcogenide thin film photovoltaic absorber materials; with an optimal band gap of about 1.5 eV. More importantly, CZTS consists of abundant and non-toxic elements, so research on CZTS thin-film solar cells has been increasing significantly in recent years. Moreover, Sb2S3 based chalcogenide thin films have been proposed for use in photovoltaic applications. The preparation of chalcogenide thin films solar cells commonly use physical vapour deposition methods including thermal/e-beam evaporation, sputtering, and pulsed laser deposition, electrochemical deposition, spray pyrolysis, solution-based synthesis, followed by the sulfurization or selenization annealing process. In this paper, we report a non-vacuum process, using atmospheric pressure chemical vapour deposition (APCVD), to fabricate chalcogenide thin film solar cell materials as well as transparent conductive oxide (TCO) thin films. The optical, electrical, and structural properties of these materials were characterized by UV-VIS-NIR, four-point probes, SEM, EDX, XRD, Micro-Raman

Electrical phase change of CVD-grown Ge-Sb-Te thin film device

A prototype Ge-Sb-Te thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 1.5 – 1.7 V. The Ge-Sb-Te thin film was fabricated by chemical vapour deposition (CVD) at atmospheric pressure using GeCl4, SbCl5, and Te precursors with reactive gas H2 at reaction temperature 780 °C and substrate temperature 250 °C. The surface morphology and composition of the CVD-grown Ge-Sb-Te thin film has been characterized by scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The CVD-grown Ge-Sb-Te thin film shows promise for the phase change memory applications

Manufacturing high purity chalcogenide glass

Chalcogenide materials are finding increasing interest as an active material in next generation optical and electronic devices. There wide range of properties, ranging from photosensitivity, ability to host rare earth ions, electrical conductivity, phase change, exceptional optical non-linearity's to name only a few are fueling this interest. Moreover, the ability to synthesize these materials in numerous forms as diverse as 2D monolayers, microspheres, optical fibres, nanowires, thin films as well as bulk glass ingots of over a kilogram in size ensures their application space is vast.We began preparation of chalcogenides, largely based on sulphides, in 1992 and since then have built up an extensive capability for their purification, synthesis and fabrication in various forms. A key aspect of this facility is the ability to process in a flowing atmosphere of hydrogen sulphide which provided the capability of synthesis from elemental, oxide or halide precursors, processing through various chemical vapour deposition reactions as well as post purification. In this talk we describe the range of materials we synthesize highlighting high purity sulphide bulk glass and transition metal di-chalcogenides for electronic applications, crystalline semiconductors for solar cell applications, low power phase change memory devices, switchable metamaterial devices as well as traditional chalcogenides glass and optical fibre

Strain engineering in graphene by laser irradiation

We demonstrate that the Raman spectrum of graphene on lithium niobate can be controlled locally by continuous exposure to laser irradiation. We interpret our results in terms of changes to doping and mechanical strain and show that our observations are consistent with light-induced gradual strain relaxation in the graphene layer

A Therapeutic Vaccine Approach to Stimulate Axon Regeneration in the Adult Mammalian Spinal Cord

AbstractAxon growth inhibitors associated with myelin play an important role in the failure of axon regeneration in the adult mammalian central nervous system (CNS). Several inhibitors are present in the mature CNS. We now present a novel therapeutic vaccine approach in which the animals' own immune system is stimulated to produce polyclonal antibodies that block myelin-associated inhibitors without producing any detrimental cellular inflammatory responses. Adult mice immunized in this manner showed extensive regeneration of large numbers of axons of the corticospinal tracts after dorsal hemisection of the spinal cord. The anatomical regeneration led to recovery of certain hind limb motor functions. Furthermore, antisera from immunized mice were able to block myelin-derived inhibitors and promote neurite growth on myelin in vitro

Chalcogenide phase change materials for nanoscale switching

Since the demonstration of threshold switching in chalcogenide alloys over forty five years ago, phase change materials have been extensively investigated for switching and data storage applications. Phase change switching is based on the reversible change between crystalline and amorphous states of a material and in many chalcogenides this change of state takes place in nanoseconds

Metamaterial electro-optic switch of nanoscale thickness

We demonstrate an innovative concept for nanoscale electro-optic switching. It exploits the frequency shift of a narrow-band Fano resonance mode in a plasmonic planar metamaterial induced by a change in the dielectric properties of an adjacent chalcogenide glass layer. An electrically stimulated transition between amorphous and crystalline forms of the glass brings about a 150 nm shift in the near-infrared resonance providing transmission modulation with a contrast ratio of 4:1 in a device of subwavelength thickness

Quantitative electron energy-loss spectroscopy (EELS) analyses of lead zirconate titanate

Electron energy-loss spectroscopy (EELS) analyses have been performed on a sol–gel deposited lead zirconate titanate film, showing that EELS can be used for heavy as well as light element analysis. The elemental distributions within the sol–gel layers are profiled using the Pb N<sub>6,7</sub>-edges, Zr M-edges, Ti L-edges and O K-edge. A multiple linear least squares fitting procedure was used to extract the Zr signal which overlaps with the Pb signal. Excellent qualitative information has been obtained on the distribution of the four elements. The non-uniform and complementary distributions of Ti and Zr within each sol–gel deposited layer are observed. The metal:oxygen elemental ratios are quantified using experimental standards of PbTiO<sub>3</sub>, PbZrO<sub>3</sub>, ZrO<sub>2</sub> and TiO<sub>2</sub> to provide relevant cross-section ratios. The quantitative results obtained for Ti/O and Pb/O are very good but the Zr/O results are less accurate. Methods of further improving the results are discussed

Interactive public digital displays: investigating its use in a high school context

This paper presents a longitudinal user study that investigated the adoption of some Bluetooth based functionalities for a public digital display in a high school. More specifically, the utilization of Bluetooth device naming extended beyond social identity representation and introduced the use of a simple interaction mechanism. The interaction mechanism involves recognizing parts of the Bluetooth device name as explicit instructions to trigger the generation of content on an interactive public display. Together with representatives of the teachers' community, the design team defined some social rules concerning usage in order to account for the specificities of the place. In the user study, three fully functional prototypes were deployed at the school hall of the high school. The functionalities introduced with the different prototypes were: the visualization on the display of the Bluetooth device names, the possibility to contribute to tag clouds and the possibility to choose icons from a given set for self-expression. The results suggest that people appropriated some but not all of the functionalities employed. Implications of our findings to the design of interactive digital displays are pointed out.(undefined