Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction

Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which degrade the performance of the qubits or, when understood and controlled, could be used as a powerful resource. To understand how to control this interaction we build a detailed profile of the spin-orbit interaction of a silicon metal-oxide-semiconductor double quantum dot system. We probe the derivative of the Stark shift, $g$-factor and $g$-factor difference for two single-electron quantum dot qubits as a function of external magnetic field and find that they are dominated by spin-orbit interactions originating from the vector potential, consistent with recent theoretical predictions. Conversely, by populating the double dot with two electrons we probe the mixing of singlet and spin-polarized triplet states during electron tunneling, which we conclude is dominated by momentum-term spin-orbit interactions that varies from 1.85 MHz up to 27.5 MHz depending on the magnetic field orientation. Finally, we exploit the tunability of the derivative of the Stark shift of one of the dots to reduce its sensitivity to electric noise and observe an 80 % increase in $T_2^*$. We conclude that the tuning of the spin-orbit interaction will be crucial for scalable quantum computing in silicon and that the optimal setting will depend on the exact mode of qubit operations used

Three-carrier spin blockade and coupling in bilayer graphene double quantum dots

The spin degree of freedom is crucial for the understanding of any condensed matter system. Knowledge of spin-mixing mechanisms is not only essential for successful control and manipulation of spin-qubits, but also uncovers fundamental properties of investigated devices and material. For electrostatically-defined bilayer graphene quantum dots, in which recent studies report spin-relaxation times T1 up to 50ms with strong magnetic field dependence, we study spin-blockade phenomena at charge configuration $(1,2)\leftrightarrow(0,3)$. We examine the dependence of the spin-blockade leakage current on interdot tunnel coupling and on the magnitude and orientation of externally applied magnetic field. In out-of-plane magnetic field, the observed zero-field current peak could arise from finite-temperature co-tunneling with the leads; though involvement of additional spin- and valley-mixing mechanisms are necessary for explaining the persistent sharp side peaks observed. In in-plane magnetic field, we observe a zero-field current dip, attributed to the competition between the spin Zeeman effect and the Kane-Mele spin-orbit interaction. Details of the line shape of this current dip however, suggest additional underlying mechanisms are at play

Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots

Pauli blockade mechanisms -- whereby carrier transport through quantum dots (QDs) is blocked due to selection rules even when energetically allowed -- are of both fundamental and technological interest, as a direct manifestation of the Pauli exclusion principle and as a key mechanism for manipulating and reading out spin qubits. Pauli spin blockade is well established for systems such as GaAs QDs, where the two-electron spin-singlet ground state is separated from the three triplet states higher in energy. However, Pauli blockade physics remains largely unexplored for systems in which the Hilbert space is expanded due to additional degrees of freedom, such as the valley quantum numbers in carbon-based materials or silicon. Here we report experiments on coupled graphene double QDs in which the spin and valley states can be precisely controlled. We demonstrate that gate and magnetic-field tuning allows switching between a spin-triplet--valley-singlet ground state with charge occupancy (2,0), where valley-blockade is observed, and a spin-singlet--valley-triplet ground state, where spin blockade is shown. These results demonstrate how the complex two-particle Hilbert space of graphene quantum dots can be unravelled experimentally, with implications for future spin and valley qubits

Spectroscopy of a single-carrier bilayer graphene quantum dot from time-resolved charge detection

We measured the spectrum of a single-carrier bilayer graphene quantum dot as a function of both parallel and perpendicular magnetic fields, using a time-resolved charge detection technique that gives access to individual tunnel events. Thanks to our unprecedented energy resolution of 4$\mu~$eV, we could distinguish all four levels of the dot's first orbital, in particular in the range of magnetic fields where the first and second excited states cross ($B_\perp\lesssim 100~$mT). We thereby experimentally establish, the hitherto extrapolated, single-charge carrier spectrum picture and provide a new upper bound for the inter-valley mixing, equal to our energy resolution

Consistency of high-fidelity two-qubit operations in silicon

The consistency of entangling operations between qubits is essential for the performance of multi-qubit systems, and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to inconsistency due to the materials-induced variability of performance between qubits and the instability of gate fidelities over time. Here we quantify this consistency for spin qubits, tying it to its physical origins, while demonstrating sustained and repeatable operation of two-qubit gates with fidelities above 99% in the technologically important silicon metal-oxide-semiconductor (SiMOS) quantum dot platform. We undertake a detailed study of the stability of these operations by analysing errors and fidelities in multiple devices through numerous trials and extended periods of operation. Adopting three different characterisation methods, we measure entangling gate fidelities ranging from 96.8% to 99.8%. Our analysis tools also identify physical causes of qubit degradation and offer ways to maintain performance within tolerance. Furthermore, we investigate the impact of qubit design, feedback systems, and robust gates on implementing scalable, high-fidelity control strategies. These results highlight both the capabilities and challenges for the scaling up of spin-based qubits into full-scale quantum processors

One- and two-qubit operations in Si-MOS quantum dots

Quantum computers have potential to solve hard problems that even the most advanced supercomputers are not capable of, such as prime factoring, database search, and quantum simulation. Quantum bits, or qubits, made from silicon quantum dots is one scalable approach that can be used to realize a quantum computer. Even though the essential ingredients for this platform have been demonstrated, certain physical phenomena that can influence quantum bit behaviour, for example, the valley- and spin-orbit coupling, require further understanding. In this thesis, we investigate harnessing the effect of spin and valley orbit couplings in silicon quantum dots. We propose a mechanism for a significant enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a hetero-interface. We calculate single qubit gate times of 170 ns for a quantum dot confined at a silicon/silicon-dioxide interface.To understand the origin of spin-orbit coupling, we experimentally probe the g-factor for two quantum dot qubits as a function of magnetic field and find that they are dominated by spin-orbit interactions originating from the vector potential. By populating the double dot we probe the mixing of singlet and spin-polarized triplet states, which we conclude is dominated by momentum-term in spin-orbit interactions. Finally, we exploit the Stark shift to reduce its sensitivity to electric noise and observe an 80% increase in the coherence time T_2^*. We proved that when understood and controlled, the small but significant spin-orbit interaction, can be used as a powerful resource. While a variety of qubit systems have shown high fidelities at the one-qubit level, superconductor technologies have been the only solid-state qubits manufactured via standard lithographic techniques which have demonstrated two-qubit fidelities near the fault-tolerant threshold. Here in silicon quantum dots, we demonstrate the single-qubit randomized benchmarking with an average Clifford gate fidelity of 99.96% and two-qubit randomized benchmarking with an average Clifford gate fidelity of 94.7% and average Controlled-ROT fidelity of 98.0%.The enhanced understanding of valley-orbit and spin-orbit coupling, together with demonstrated high fidelity single- and two-qubit gates provides opportunities that are promising for the scalability of spin qubit systems

Electrically driven spin qubit based on valley mixing

The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a heterointerface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times tπ of 170 ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.QCD/Veldhorst La