219 research outputs found

    Dynamics of traveling waves in the transverse section of a laser

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    We analyze the general features of the formation and interaction of transverse traveling waves and the appearance of filamentation in broad area semiconductor lasers with current profiling. For small apertures, the emitted profile is symmetric consisting of two counterpropagating transverse traveling waves, both emanating from the center of the device. For larger apertures, the emission becomes asymmetric as one of the traveling waves expands to occupy an increased area while the other occupies the remaining, smaller spatial region. In both devices, the pattern becomes unstable at higher injection currents due to optical filamentation, although an intermediate state is present in the wider device whereby the dominant wave undergoes a Hopf bifurcation before filamentation occurs

    Refractive index dynamics of InAs/GaAs quantum dots

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    The refractive index dynamics of an InAs/InGaAs/GaAs dots-in-a-well semiconductor optical amplifier is calculated and compared with experimental results. The fast and slow recovery timescales together with the behaviour with increasing injection are reproduced and explained in terms of the density of carriers available in upper quantum dot and continuum states. Also, a Coulomb-mediated shift of the dot susceptibility is suggested as responsible for the fast recovery of the phas

    The fast recovery dynamics of a quantum dot semiconductor optical amplifier

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    We consider a rate equation model of a quantum dot semiconductor optical amplifier that takes into account carrier capture, escape, and Pauli blocking processes. We evaluate possible differences between phonon-assisted or Auger processes being dominant for recovery. An analytical solution which corresponds to phonon-assisted interaction is then used to accurately fit experimental recovery curves and allows an estimation of both the carrier capture and escape rates

    Stabilization of self-focusing instability in wide-aperture semiconductor lasers

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    A mechanism for the stabilization of the output of filamentary broad-area edge-emitting semiconductor lasers is analyzed experimentally and theoretically. This mechanism occurs when the carrier density is profiled in the transverse direction. The laser structure consisted of a wide-aperture edge-emitting laser diode operating in pulsed mode to avoid thermal guiding effects. The injection current profile was modified from the usual step-function case to a Lorentzian-like profile through the inclusion of a 10 mum p-type epitaxial spreading layer. The resulting nonlinear transverse mode is described and the possibility of its observation in two transverse dimensions is discussed

    Lasing from semiconductor microring on the end of an optical fiber

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    Isolated InGaAsP microrings with an outer diameter of 5.8 mum, a width of 1 mum, and a thickness of 0.41 mum were fabricated by epitaxial separation. Individual devices were bonded to multimode optical fiber using Van der Waals forces and optically pumped through the fiber. Lasing around 1505 nm was measured under pulsed and cw pumping at room temperature. The threshold pump power for pulsed operation was estimated to be 38 and 80 muW for cw operation. Multiple radial and azimuthal modes were present due to strong, three-dimensional confinement. Under strong pulsed pumping thermal effects caused the emission wavelength to chirp. (C) 2002 American Institute of Physics. (DOI: 10.1063/1.1496496

    Design, modelling and preliminary characterisation of microneedle-based electrodes for tissue electroporation in vivo

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    We analysed the use of microneedle-based electrodes to enhance electroporation of mouse testis with DNA vectors for production of transgenic mice. Different microneedle formats were developed and tested, and we ultimately used electrodes based on arrays of 500 μm tall microneedles. In a series of experiments involving injection of a DNA vector expressing Green Fluorescent Protein (GFP) and electroporation using microneedle electrodes and a commercially available voltage supply, we compared the performance of flat and microneedle electrodes by measuring GFP expression at various timepoints after electroporation. Our main finding, supported by both experimental and simulated data, is that needles significantly enhanced electroporation of testis

    Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers

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    The gain and phase dynamics of InAs/GaAs quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks. (c) 2007 American Institute of Physics.(DOI: 10.1063/1.2823589
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