155-μm distributed feedback laser monolithically integrated with amplifier array

We present a laterally coupled 1.55-μm distributed feedback laser monolithically integrated with multistage multimode interferences and semiconductor optical amplifiers, using low-bias currents and providing an output power of ∼100  mW with a quasi-single spatial-mode far-field pattern and low divergence angle of 3.5° in the horizontal direction. The fabrication techniques are based on side-wall gratings and quantum-well intermixing and offer a simple, flexible, and low cost alternative to conventional methods

Photonic integrated circuits based on quantum well intermixing techniques

The passive sections of a monolithic device must have a wider bandgap than the active regions to reduce losses due to direct interband absorption. Such bandgap engineering is usually realized by complicated regrown butt-joint or selective-area growth techniques. We, however, have developed a simple, flexible and low-cost alternative technique – quantum well intermixing (QWI) – to increase the bandgap in selected areas of an integrated device post-growth. To verify the QWI process, we have fabricated the following demonstrators: a 40 GHz semiconductor mode-locked laser producing pulses as short as 490 fs; a 10 GHz passively mode-locked extended cavity laser integrated with surface-etched distributed Bragg reflector (DBR) which can be tuned in both wavelength and pulse repetition rate; four 10 GHz 1.55 μm AlGaInAs/InP mode-locked surfaced-etched DBR lasers integrated combiner, a semiconductor optical amplifier and modulator where the four channels can be operated separately or simultaneously; a CWDM source with 12 nm wavelength separation based on an AlGaInAs/InP integrated distributed feedback laser array; and a 1.55 μm DFB laser monolithically integrated with power amplifier array. In all these applications, QWI has the advantage of eliminating crystal regrowth and the associated stringent tolerance requirements that are required in traditional integration schemes

THz Repetition Frequency Mode-Locked Laser Using Novel Sampled Gratings

Conventional sampled grating distributed-Bragg-gratings (C-SGDBRs) are widely used in tunable DBR lasers [1], and more recently have been used to precisely control the wavelength spacing in arrays of DBR lasers for use in WDM systems [2], and as the reflectors in THz repetition frequency (Fr) semiconductor mode locked lasers (SMLLs) [3]. However, the effective coupling coefficient, κ, of a C-SGDBR (Fig. 1(a)) is necessarily reduced substantially from that of a uniform grating because much of the sampled grating period has no grating. Here, for the first time, we apply a combination of π-phase shifted gratings, previously demonstrated in fiber lasers [4], with the C-SGDBR technique to THz repetition frequency SMLLs. Using a single electron beam lithography (EBL) step we have demonstrated a 620 GHz side-wall SGDBR MLL with an increased effective κ

Integrated Phase-locked Laser Diodes at 1.55μm

Two types of integrated phased locked laser diodes operating at 1.55 μm were demonstrated, using either a distributed feedback laser seeding source or a self-locking multi-mode interference array. Both exhibited far field patterns that reflected mutual coherence between the light from the output waveguides

1.55 µm AlGaInAs/InP sampled grating laser diodes for mode-locking at THz frequencies

We report mode locking in lasers integrated with semiconductor optical amplifiers, using either conventional or phase shifted sampled grating distributed Bragg reflectors(DBRs). For a conventional sampled grating with a continuous grating coupling coefficient of ~80 cm-1, mode-locking was observed at a fundamental frequency of 628 GHz and second harmonic of 1.20 THz. The peak output power was up to 142 mW. In the phase shifted sampled grating design, the grating is present along the entire length of the reflector with π-phase shift steps within each sampled section. The effective coupling coefficient is therefore increased substantially. Although the continuous grating coupling coefficient for the phase shifted gratings was reduced to ~23 cm-1 because of a different fabrication technology, the lasers demonstrated mode locking at fundamental repetition frequencies of 620 GHz and 1 THz, with a much lower level of amplified spontaneous emission seen in the output spectra than from conventional sampled grating devices. Although high pulse reproducibility and controllability over a wide operation range was seen for both types of grating, the π-phase-shifted gratings already demonstrate fundamental mode-locking to 1 THz. The integrated semiconductor optical amplifier makes sampled grating DBR lasers ideal pump sources for generating THz signals through photomixing

Laterally-Coupled Dual-Grating Distributed Feedback Lasers for Generating Mode-Beat Terahertz Signals

We present a laterally-coupled AlGaInAs/InP DFB laser emitting two longitudinal modes simultaneously within the same cavity and integrated with EAM. A stable 0.82 THz beating signal was observed over a wide range of bias parameters

Novel Sampled Grating Design for High Precision, Multiple Wavelength DFB Laser Arrays

No abstract available

Mode Locking at THz Repetition Frequencies using Lasers with Phase Shifted Sampled Gratings

Mode-locking at repetition frequencies of 800 GHz and 1 THz is reported in pi-phase-shifted sampled grating distributed-Bragg-reflector (DBR) lasers. The effective coupling coefficient of the phase-shifted gratings is twice that of conventional sampled grating DBRs

Photonic integrated circuits for terahertz source generation

The authors introduce four kinds of terahertz photonics components based on photonic integrated circuits (PICs). A PIC-based integrated optoelectronic synthesiser for THz communications is described, which can be tuned continuously over the range 0.254-2.723 THz using photomixing. A laterally-coupled dual-grating distributed feedback laser (DFB) diode integrated with an electroabsorption modulator is used to generate an 820 GHz beat signal. THz signal production is reported using a dual-wavelength DFB diode laser with a two-section phase-shifted sampled Bragg grating. Finally, a THz source at 640 GHz, based on a sampled grating distributed Bragg reflector semiconductor mode-locked laser diode, is reported offering superior reproducibility, controllability, and a wider operation range than other reported mode-locked THz laser diodes. Each of these sources is a monolithic construction emitting light at 1.5 μm. The light can be amplified in an erbium-doped fibre amplifier, delivered over silica optical fibre and used to generate THz radiation via a photodiode antenna or photoconductive antenna in a remote location

A dual-grating InGaAsP/InP DFB laser integrated with an SOA for THz generation

We report a dual-mode semiconductor laser that has two gratings with different periods below and above the active layer. A semiconductor optical amplifier (SOA), which is integrated with the dual-mode laser, plays an important role in balancing the optical power and reducing the linewidths of the emission modes. A stable two mode emission with the 13.92-nm spacing can be obtained over a wide range of distributed feedback and SOA injection currents. Compared with other types of dual-mode lasers, our device has the advantages of simple structure, compact size, and low fabrication cost