Phonon Softening and Direct to Indirect Bandgap Crossover in Strained Single Layer MoSe2

Motivated by recent experimental observations of Tongay et al. [Tongay et al., Nano Letters, 12(11), 5576 (2012)] we show how the electronic properties and Raman characteristics of single layer MoSe2 are affected by elastic biaxial strain. We found that with increasing strain: (1) the E' and E" Raman peaks (E1g and E2g in bulk) exhibit significant red shifts (up to 30 cm-1), (2) the position of the A1' peak remains at 180 cm-1 (A1g in bulk) and does not change considerably with further strain, (3) the dispersion of low energy flexural phonons crosses over from quadratic to linear and (4) the electronic band structure undergoes a direct to indirect bandgap crossover under 3% biaxial tensile strain. Thus the application of strain appears to be a promising approach for a rapid and reversible tuning of the electronic, vibrational and optical properties of single layer MoSe2 and similar MX2 dichalcogenides.Comment: http://link.aps.org/doi/10.1103/PhysRevB.87.12541

Problematic online behaviors among adolescents and emerging adults: associations between cyberbullying perpetration, problematic social media use, and psychosocial factors

Over the past two decades, young people's engagement in online activities has grown markedly. The aim of the present study was to examine the relationship between two specific online behaviors (i.e., cyberbullying perpetration, problematic social media use) and their relationships with social connectedness, belongingness, depression, and self-esteem among high school and university students. Data were collected from two different study groups via two questionnaires that included the Cyberbullying Offending Scale, Social Media Use Questionnaire, Social Connectedness Scale, General Belongingness Scale, Short Depression-Happiness Scale, and Single Item Self-Esteem Scale. Study 1 comprised 804 high school students (48% female; mean age 16.20 years). Study 2 comprised 760 university students (60% female; mean age 21.48 years). Results indicated that problematic social media use and cyberbullying perpetration (which was stronger among high school students) were directly associated with each other. Belongingness (directly) and social connectedness (indirectly) were both associated with cyberbullying perpetration and problematic social media use. Path analysis demonstrated that while age was a significant direct predictor of problematic social media use and cyberbullying perpetration among university students, it was not significant among high school students. In both samples, depression was a direct predictor of problematic social media use and an indirect predictor of cyberbullying perpetration. However, majority of these associations were relatively weak. The present study significantly adds to the emerging body of literature concerning the associations between problematic social media use and cyberbullying perpetration

Trait emotional intelligence and problematic social media use among adults: the mediating role of social media use motives

There are many contributing factors to problematic social media use including personality differences, psychosocial factors, and specific use motivations. The present study (N = 444 emerging adults, 75% women) investigated the direct and indirect relationships between trait emotional intelligence and problematic social media use via social media use motives by testing a complex mediation model. Path analyses suggested that trait emotional intelligence was directly and indirectly associated with problematic social media use via two social media use motives: (i) expressing or presenting a more popular self, and (ii) passing time. Results of the present study indicate that trait emotional intelligence may have a role in the motives for using social media as well as the development and maintenance of problematic social media use. Moreover, future studies should focus mediator risk factors between trait emotional intelligence and problematic social media use

Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2

Motivated by recent experimental observations of Tongay et al. [Nano Lett. 12, 5576 (2012)] we show how the electronic properties and Raman characteristics of single layer MoSe2 are affected by elastic biaxial strain. We found that with increasing strain: (1) the E′ and E′′ Raman peaks (E2g and E1g in bulk) exhibit significant redshifts (up to ∼30 cm−1), (2) the position of the A1′ peak remains at ∼180 cm−1 (A1g in bulk) and does not change considerably with further strain, (3) the dispersion of low energy flexural phonons crosses over from quadratic to linear, and (4) the electronic band structure undergoes a direct to indirect band gap crossover under ∼3% biaxial tensile strain. Thus the application of strain appears to be a promising approach for a rapid and reversible tuning of the electronic, vibrational, and optical properties of single layer MoSe2 and similar MX2 dichalcogenides.This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem programme of the Flemish government. Computational resources were partially provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). H.S. is supported by a FWO Pegasus Marie Curie Long Fellowship.Peer Reviewe

Extraction of important electrical parameters of CuO

WOS: 000287047500053Conductivity, X-ray diffraction (XRD), optical absorption and atomic force microscopy (AFM) measurements of CuO thin film were presented. Three distinct electrical conduction contributions with discrete characteristic activation energies were observed. The applicability of various theoretical models was considered to explain results on electrical transport. We extracted important electrical parameters of CuO, which might be useful for its gas sensor applications. (C) 2010 Elsevier B.V. All rights reserved.State of Planning Organization of TurkeyTurkiye Cumhuriyeti Kalkinma Bakanligi [2001K120590]; Ankara UniversityAnkara University [2007-07-45-054]This work was supported by the State of Planning Organization of Turkey under Grant no. 2001K120590 and the Ankara University BAP under Project number 2007-07-45-054. We would also like to thank Prof. Dr. Yusuf Kagan Kadioglu and Ms. Murat Yavuz for providing XRD and AFM measurements