An Algorithm for constructing Hjelmslev planes

Projective Hjelmslev planes and Affine Hjelmselv planes are generalisations of projective planes and affine planes. We present an algorithm for constructing a projective Hjelmslev planes and affine Hjelsmelv planes using projective planes, affine planes and orthogonal arrays. We show that all 2-uniform projective Hjelmslev planes, and all 2-uniform affine Hjelsmelv planes can be constructed in this way. As a corollary it is shown that all 2-uniform Affine Hjelmselv planes are sub-geometries of 2-uniform projective Hjelmselv planes.Comment: 15 pages. Algebraic Design Theory and Hadamard matrices, 2014, Springer Proceedings in Mathematics & Statistics 13

Quantization of the Hall conductivity well beyond the adiabatic limit in pulsed magnetic fields

We measure the Hall conductivity, $\sigma_{xy}$, on a Corbino geometry sample of a high-mobility AlGaAs/GaAs heterostructure in a pulsed magnetic field. At a bath temperature about 80 mK, we observe well expressed plateaux in $\sigma_{xy}$ at integer filling factors. In the pulsed magnetic field, the Laughlin condition of the phase coherence of the electron wave functions is strongly violated and, hence, is not crucial for $\sigma_{xy}$ quantization.Comment: 4 pages, 4 figures, submitted to PR

Good Random Matrices over Finite Fields

The random matrix uniformly distributed over the set of all m-by-n matrices over a finite field plays an important role in many branches of information theory. In this paper a generalization of this random matrix, called k-good random matrices, is studied. It is shown that a k-good random m-by-n matrix with a distribution of minimum support size is uniformly distributed over a maximum-rank-distance (MRD) code of minimum rank distance min{m,n}-k+1, and vice versa. Further examples of k-good random matrices are derived from homogeneous weights on matrix modules. Several applications of k-good random matrices are given, establishing links with some well-known combinatorial problems. Finally, the related combinatorial concept of a k-dense set of m-by-n matrices is studied, identifying such sets as blocking sets with respect to (m-k)-dimensional flats in a certain m-by-n matrix geometry and determining their minimum size in special cases.Comment: 25 pages, publishe

Critical State Behaviour in a Low Dimensional Metal Induced by Strong Magnetic Fields

We present the results of magnetotransport and magnetic torque measurements on the alpha-(BEDT-TTF)2KHg(SCN)4 charge-transfer salt within the high magnetic field phase, in magnetic fields extending to 33 T and temperatures as low as 27 mK. While the high magnetic field phase (at fields greater than ~ 23 T) is expected, on theoretical grounds, to be either a modulated charge-density wave phase or a charge/spin-density wave hybrid, the resistivity undergoes a dramatic drop below ~ 3 K within the high magnetic field phase, falling in an approximately exponential fashion at low temperatures, while the magnetic torque exhibits pronounced hysteresis effects. This hysteresis, which occurs over a broad range of fields, is both strongly temperature-dependent and has several of the behavioural characteristics predicted by critical-state models used to describe the pinning of vortices in type II superconductors in strong magnetic fields. Thus, rather than exhibiting the usual behaviour expected for a density wave ground state, both the transport and the magnetic properties of alpha-(BEDT-TTF)2KHg(SCN)4, at high magnetic fields, closely resembles those of a type II superconductor

de Haas-van Alphen Effect in the Two-Dimensional and the Quasi-Two-Dimensional Systems

We study the de Haas-van Alphen (dHvA) oscillation in two-dimensional and quasi-two-dimensional systems. We give a general formula of the dHvA oscillation in two-dimensional multi-band systems. By using this formula, the dHvA oscillation and its temperature-dependence for the two-band system are shown. By introducing the interlayer hopping $t_z$, we examine the crossover from the two-dimension, where the oscillation of the chemical potential plays an important role in the magnetization oscillation, to the three-dimension, where the oscillation of the chemical potential can be neglected as is well know as the Lifshitz and Kosevich formula. The crossover is seen at $4 t_z \sim 8 ta b H /\phi_0$, where a and b are lattice constants, $\phi_0$ is the flux quantum and 8t is the width of the total energy band. We also study the dHvA oscillation in quasi-two-dimensional magnetic breakdown systems. The quantum interference oscillations such as $\beta-\alpha$ oscillation as well as the fundamental oscillations are suppressed by the interlayer hopping $t_z$, while the $\beta+\alpha$ oscillation gradually increases as $t_z$ increases and it has a maximum at $t_z/t\approx 0.025$. This interesting dependence on the dimensionality can be observed in the quasi-two-dimensional organic conductors with uniaxial pressure.Comment: 11 pages, 14 figure

Theory of neutral and charged exciton scattering with electrons in semiconductor quantum wells

Electron scattering on both neutral ($X$) and charged ($X^-$) excitons in quantum wells is studied theoretically. A microscopic model is presented, taking into account both elastic and dissociating scattering. The model is based on calculating the exciton-electron direct and exchange interaction matrix elements, from which we derive the exciton scattering rates. We find that for an electron density of $10^9 {\rm cm}^{-2}$ in a GaAs QW at $T=5K$, the $X^-$ linewidth due to electron scattering is roughly twice as large as that of the neutral exciton. This reflects both the $X^-$ larger interaction matrix elements compared with those of $X$, and their different dependence on the transferred momentum. Calculated reflection spectra can then be obtained by considering the three electronic excitations of the system, namely, the heavy-hole and light-hole 1S neutral excitons, and the heavy-hole 1S charged exciton, with the appropriate oscillator strengths.Comment: 18 pages, 12 figure

Transient four-wave mixing in T-shaped GaAs quantum wires

The binding energy of excitons and biexcitons and the exciton dephasing in T-shaped GaAs quantum wires is investigated by transient four-wave mixing. The T-shaped structure is fabricated by cleaved-edge overgrowth, and its geometry is engineered to optimize the one-dimensional confinement. In this wire of 6.6×24 nm2 size, we find a one-dimensional confinement of more than 20 meV, an inhomogeneous broadening of 3.4 meV, an exciton binding energy of 12 meV, and a biexciton binding energy of 2.0 meV. A dispersion of the homogeneous linewidth within the inhomogeneous broadening due to phonon-assisted relaxation is observed. The exciton acoustic-phonon-scattering coefficient of 6.1±0.5 μeV/K is larger than in comparable quantum-well structures