Fogarty catheter for OLV of a neonate

Here, we report two cases involving a neonate and child in which a slip joint section was used to thread a Fogarty catheter into the endotracheal tube for one-lung ventilation (OLV). Both the neonate and infant required OLV, and were placed under general anesthesia. A Fogarty catheter was used for OLV. The Fogarty catheter was passed into the intraluminal side of the endotracheal tube through a slip joint section. OLV was maintained successfully without severe air leakage or Fogarty catheter displacement. The neonate had been intubated pre-operatively with a 3.5-mm inner diameter endotracheal tube, and we used that tube. These cases indicate that the technique can be applied to pre-operatively intubated patients and does not require surgeons to exchange endotracheal tubes. Use of the slip joint section technique facilitates Fogarty catheter fixation without additional dead space

Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface

Single photon source (SPS) providing nonclassical light states on demand is one of the key technologies for the application of quantum communication and optical quantum computer. In this paper, room temperature electrical control of single photon emission from defects at 4H-SiC surface is presented. Planar-type 4H-SiC p+nn+ diodes are fabricated and defects that act as SPS are formed on the surface of n-type epi-layer by field oxidation process. The photon emission properties of SPSs are investigated using a home-built confocal microscopy. Results show that the electroluminescence (EL) intensity of SPS can be controlled by minority carrier injection of forward bias voltages, while the photoluminescence (PL) intensity of SPS can be controlled by reverse bias voltages. No significant variations due to applied bias voltages are observed in the EL and PL spectra, indicating the defect structure and charge state are unchanged. The PL intensity modulation by switching a reverse bias voltage is also demonstrated

Various single photon sources observed in SiC pin diodes

Luminescence centers formed in the vicinity of SiC surface are expected to be utilized as Single Photon Sources (SPSs) because of the high-brightness and the potential of electric control at room temperature. In order to gain more insight into the surface SPSs, 4H-SiC pin-diodes are fabricated and the surface SPSs formed in the pin diodes are investigated using a confocal laser scanning fluorescence microscope (CFM). Locations where the surface SPSs appear as well as photoluminescence spectra of the observed surface SPSs are presented. Antibunching characteristics of the surface SPSs are also investigated by the second order autocorrelation function measurement. We conclude that two different types of surface SPSs appear in the surface of 4H-SiC. The location dependence of the observed surface SPSs indicates that oxide layer on 4H-SiC plays an important role in the formation of surface SPSs, whereas neither ion implantation nor donor ions affected. The peak wavelength of luminescence spectra widely varies depending on their locations, indicating lattice strain introduced by the oxide layer has the potential to affect the luminescence spectra.International Conference on Silicon Carbide and Related Materials 201

Various Single Photon Sources Observed in SiC pin Diodes

4H-SiC pin-diodes are fabricated and the surface SPSs formed in the pin diodes are investigated using a confocal laser scanning fluorescence microscope (CFM). Locations where the surface SPSs appear as well as photoluminescence spectra of the observed surface SPSs are presented. Antibunching characteristics of the surface SPSs are also investigated by the second order autocorrelation function measurement. We conclude that two different types of surface SPSs appear in the surface of 4H-SiC. The locationdependence of the observed surface SPSs indicates that the oxide layer on 4H-SiC plays an important role in the formation of surface SPSs, whereas neither ion implantation nor donor ions had an effect. The peak wavelength of luminescence spectra widely varies depending on their locations, indicatinglattice strain introduced by the oxide layer has the potential to affect the luminescence spectra

Creation and Functionalization of Defects in SiC by Proton Beam Writing

Proton beam writing (PBW) a with 1.7 MeV proton micro beam was carried out into high purity semi-insulating 4H-SiC bulk substrates. Luminescent defects created in the SiC were investigated. A peak around 900 nm associated with the silicon vacancy was observed for the irradiated SiC without any post-implantation annealing. The overall depth profile of photon counts detected from irradiatedareas is in good agreement with simulated vacancy depth profile. Since the silicon vacancy is known as a single photon source with a spin that can be controlled at room temperature, PBW is expected to be a useful tool to fabricate spin qubits