Generation of 1180 Å period gratings with a Xe ion laser

Holographic lithography with the 2315 Å line of a xenon ion laser is used to produce gratings in polymethylmethacrylate. An 1180 Å period grating is made and examined with a scanning electron microscope (SEM). This grating period is appropriate for use as a first-order grating with a GaAs distributed feedback laser

A system and methodologies for absolute QE measurements from the vacuum ultraviolet through the NIR

In this paper we present our system design and methodology for making absolute quantum efficiency (QE) measurements through the vacuum ultraviolet (VUV) and verify the system with delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, good dewar chamber vacuum to prevent on-chip condensation, and more stringent handling requirements.Comment: The following article has been submitted to/accepted by the Review of Scientific Instruments. After it is published, it will be found at http://rsi.aip.org

Charge-coupled devices detectors with high quantum efficiency at UV wavelengths

We report on multilayer high efficiency antireflection coating (ARC) design and development for use at UV wavelengths on CCDs and other Si-based detectors. We have previously demonstrated a set of single-layer coatings, which achieve >50% quantum efficiency (QE) in four bands from 130 to 300 nm. We now present multilayer coating designs that significantly outperform our previous work between 195 and 215 nm. Using up to 11 layers, we present several model designs to reach QE above 80%. We also demonstrate the successful performance of 5 and 11 layer ARCs on silicon and fused silica substrates. Finally, we present a five-layer coating deposited onto a thinned, delta-doped CCD and demonstrate external QE greater than 60% between 202 and 208 nm, with a peak of 67.6% at 206 nm

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness

Charge-coupled devices detectors with high quantum efficiency at UV wavelengths

We report on multilayer high efficiency antireflection coating (ARC) design and development for use at UV wavelengths on CCDs and other Si-based detectors. We have previously demonstrated a set of single-layer coatings, which achieve >50% quantum efficiency (QE) in four bands from 130 to 300 nm. We now present multilayer coating designs that significantly outperform our previous work between 195 and 215 nm. Using up to 11 layers, we present several model designs to reach QE above 80%. We also demonstrate the successful performance of 5 and 11 layer ARCs on silicon and fused silica substrates. Finally, we present a five-layer coating deposited onto a thinned, delta-doped CCD and demonstrate external QE greater than 60% between 202 and 208 nm, with a peak of 67.6% at 206 nm

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness

Studies of jet production rates in e + e − annihilation at E cm =29 GeV

Production rates of multijet hadronic final states are studied in e + e − annihilation at 29 GeV center of mass energy. QCD shower model calculations with exact first order matrix element weighting at the first gluon vertex are capable of reproducing the observed multijet event rates over a large range of jet pair masses. The method used to reconstruct jets is well suited for directly comparing experimental jet rates with parton rates calculated in perturbative QCD. Evidence for the energy dependene of α s is obtained by comparing the observed production rates of 3-jet events with results of similar studies performed at higher center of mass energies.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/47886/1/10052_2005_Article_BF01506527.pd