Who Ya Gonna Call? Networks of Rural School Administrators

When they need help or advice, who are rural school administrators going to call? Relationships among rural school administrators develop into networks that can affect the success of administrators and their schools. Understanding the structure and content of these networks provides insights into how resources, innovations, and communication flow both within and between rural district administrators. Based on network theory and analysis, this study examines the structure, content, and strategic implications of the administrative networks within and across six contiguous rural school districts in the Western United States. Network graphs are included, illustrating both individual district and the combined six-district rural administrator networks. While acquaintance ties and active work ties are evident both within and across districts, relationally embedded ties and greater cohesion of ties are more evident within districts than across districts. Analyses include consideration of administrative assignment, gender, and geographical location of the network structures. Strategic implications of the network structures and content are discussed

Improved GaN-based HEMT performance by nanocrystalline diamond capping

As a wide-bandgap semiconductor, gallium nitride (GaN) is an attractive material for next-generation power devices. To date, the capabilities of GaN-based high electron mobility transistors (HEMTs) have been limited by self-heating effects (drain current decreases due to phonon scattering-induced carrier velocity reductions at high drain fields). Despite awareness of this, attempts to mitigate thermal impairment have been limited due to the difficulties involved with placing high thermal conductivity materials close to heat sources in the device. Heat spreading schemes have involved growth of AIGaN/GaN on single crystal or CVD diamond, or capping of fullyprocessed HEMTs using nanocrystalline diamond (NCD). All approaches have suffered from reduced HEMT performance or limited substrate size. Recently, a "gate after diamond" approach has been successfully demonstrated to improve the thermal budget of the process by depositing NCD before the thermally sensitive Schottky gate and also to enable large-area diamond implementation