Pulsed-laser deposition of MgB2 and B thin films

Thin films of the novel superconductor MgB2 were deposited from an Mg-enriched MgB2 target or by alternating ablation from Mg and B targets, depositing multilayers. The superconducting films were achieved in situ by a two-step process: deposition at low temperatures ranging from room temperature to 200 °C and subsequently heating to 600 °C. The color of the plasma originating from Mg or Mg-enriched MgB2 targets during the deposition is an indicator of the constituents of the plasma and can be used to adjust the plasma parameters like pressure and energy density. The films showed a reduced critical temperature (Tc) compared to the bulk value (39 K), which is attributed to the small grain sizes and the relatively high base pressure of the system (10-7 mbar) causing impurities (oxygen, carbon...). To investigate B oxidation and to determine the suitable deposition conditions for B, films made by pulsed-laser deposition (PLD) from B target were analyzed by XPS. The films are very sensitive to the ambient gas purity and the base pressure. We anticipate an improvement of Tc and the crystallinity of MgB2 thin films by using PLD in high vacuum and with a high purity Ar and H2 gas mixture

RSFQ Circuitry Using Intrinsic π-Phase Shifts

The latching of temporary data is essential in the rapid single flux quantum (RSFQ) electronics family. Its pulse-driven nature requires two or more stable states in almost all cells. Storage loops must be designed to have exactly two stable states for binary data representation. In conventional RSFQ such loops are constructed to have two stable states, e.g. by using asymmetric bias currents. This bistability naturally occurs when phase-shifting elements are included in the circuitry, such as pi-Josephson junctions or a pi-phase shift associated with an unconventional (d-wave) order parameter symmetry. Both approaches can be treated completely analogously, giving the same results. We have demonstrated for the first time the correct operation of a logic circuit, a toggle-flip-flop, using rings with an intrinsic pi-phase shift (pi-rings) based on hybrid high-Tc to low-Tc Josephson junctions. Because of their natural bistability these pi-rings improve the device symmetry, enhance operation margins and alleviate the need for bias current lines.\ud \u

Electronic reconstruction at n-type SrTiO3/LaAlO3 interfaces

Electron-energy-loss spectroscopy (EELS) is used to investigate single layers of LaAlO3 grown on SrTiO3 having an n-type interface as well as multilayers of LaAlO3 and SrTiO3 in which both n- and p-type interfaces occur. Only minor changes in Ti valence at the n-type interface are observed. This finding seems to contradict earlier experiments for other SrTiO3/LaAlO3 systems where large deviations in Ti valency were assumed to be responsible for the conductivity of these interfaces. Ab initio calculations have been carried out in order to interpret our EELS results. Using the concept of Bader charges, it is demonstrated that the so-called polar discontinuity is mainly resolved by lattice distortions and to a far lesser extent by changes in valency for both single layer and multilayer geometries

Superconducting thin films of MgB2 on Si by pulsed laser deposition

Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and annealed at 600°C. The zero resistance transition temperatures were 11-15.5 K, with an onset transition temperature of 27 K. Special care has been taken to avoid oxidation of Mg in the laser plasma and deposited film, by optimizing the background pressure of Ar gas in the deposition chamber. For this the optical emission in the visible range from the plasma has been used as indicator. Preventing Mg from oxidation was found to be essential to obtain superconducting films