Strong coupling of light with A and B excitons in GaN microcavities grown on silicon

We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111). At low temperature, the strong coupling of both the A and B excitonic features of GaN with the cavity mode is clearly resolved in the microcavity. At room temperature a Rabi energy of 50 meV is observed and well reproduced using transfer-matrix reflectivity calculations describing the interaction of both the A and B excitonic states with the photonic mod

Strong light-matter coupling in GaN microcavities grown on silicon(111) at room temperature

We present experimental results demonstrating strong light-matter coupling at room temperature in bulk GaN microcavities grown on silicon(111). Simple low finesse planar microcavities show a Rabi energy as high as 60 meV at room temperature. We also demonstrate room temperature strong-coupling from a bulk GaN microcavity with epitaxial distributive Bragg reflectors (DBRs). Furthermore, for this structure at low temperature, the strong coupling of both the A and B excitonic features of GaN with the cavity mode are clearly resolved for the first time in such a microcavity. At room temperature a Rabi energy of 50 meV is observed, and well reproduced using numerical analysis describing the interaction of both the A and B excitonic states with the photonic mode

Room temperature Strong coupling in low finesse GaN microcavities

We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities. Angle dependent reflectivity measurements demonstrate strong-coupling with a Rabi-energy of 50meV at room temperature which is well reproduced with transfer matrix simulations. The absence of strong coupling in the photoluminescence is attributed to the low finesse of the microcavity (Q=60) and is confirmed by simulations which indicate a quality factor of 90 is required to observe strong-coupling in the emissio