Učinak opuštanja na prekidačka svojstva tankih slojeva CuInSeTe

The switching properties of amorphous CuInSeTe thin films have been investigated. The amorphous quaternary semiconductor CuInSeTe thin films ∼ 220 nm and ∼ 330 nm thick have been prepared by thermal evaporation of the bulk compound under vacuum of about 10−4 Pa and with deposition rate about 8 nm/s. The structure of the bulk and thin films were investigated by the X-ray diffraction technique. The compositional studies of CuInSeTe in both powder and thin films were carried out by Perkin Elmer Model 1100 atomic absorption spectrometer. The annealing of the films at different annealing temperatures (300, 350, 400, 450 and 500 K) improves the switching characteristics and decrease the threshold voltage Vth. The threshold switching voltage and the threshold activation energy Es were found to decrease linearly with increasing annealing temperature. Moreover, the threshold switching voltage decreased exponentially with temperature.Istraživali smo prekidačka svojstva amorfnih tankih slojeva CuInSeTe. Tanke amorfne slojeve četiritvornog poluvodiča CuInSeTe debljine ∼ 220 nm i ∼ 330 nm pripremali smo naparavanjem spoja u vakuumu pri oko 10−4 Pa, brzinom naparavanja od oko 8 nm/s. Strukturu praha i tankih slojeva odredili smo rendgenskom difrakcijom. Sastav CuInSeTe u prahu i tankih slojeva ispitali smo pomoću Perkin Elmer-ovog (model 1100) apsorpcijskog spektrometra. Opuštanje tankih slojeva na nizu temperatura (300, 350, 400, 450 i 500 K) poboljšava njihova preklopna svojstva i smanjuje napon praga preklopnog napona Vth. Našli smo da se prag preklopnog napona i prag aktivacijske energije Es linearno smanjuju s povećanjem temperature opuštanja. K tome, prag preklopnog napona smanjuje se eksponencijalno s temperaturom opuštanja

Učinak opuštanja na prekidačka svojstva tankih slojeva CuInSeTe

The switching properties of amorphous CuInSeTe thin films have been investigated. The amorphous quaternary semiconductor CuInSeTe thin films ∼ 220 nm and ∼ 330 nm thick have been prepared by thermal evaporation of the bulk compound under vacuum of about 10−4 Pa and with deposition rate about 8 nm/s. The structure of the bulk and thin films were investigated by the X-ray diffraction technique. The compositional studies of CuInSeTe in both powder and thin films were carried out by Perkin Elmer Model 1100 atomic absorption spectrometer. The annealing of the films at different annealing temperatures (300, 350, 400, 450 and 500 K) improves the switching characteristics and decrease the threshold voltage Vth. The threshold switching voltage and the threshold activation energy Es were found to decrease linearly with increasing annealing temperature. Moreover, the threshold switching voltage decreased exponentially with temperature.Istraživali smo prekidačka svojstva amorfnih tankih slojeva CuInSeTe. Tanke amorfne slojeve četiritvornog poluvodiča CuInSeTe debljine ∼ 220 nm i ∼ 330 nm pripremali smo naparavanjem spoja u vakuumu pri oko 10−4 Pa, brzinom naparavanja od oko 8 nm/s. Strukturu praha i tankih slojeva odredili smo rendgenskom difrakcijom. Sastav CuInSeTe u prahu i tankih slojeva ispitali smo pomoću Perkin Elmer-ovog (model 1100) apsorpcijskog spektrometra. Opuštanje tankih slojeva na nizu temperatura (300, 350, 400, 450 i 500 K) poboljšava njihova preklopna svojstva i smanjuje napon praga preklopnog napona Vth. Našli smo da se prag preklopnog napona i prag aktivacijske energije Es linearno smanjuju s povećanjem temperature opuštanja. K tome, prag preklopnog napona smanjuje se eksponencijalno s temperaturom opuštanja