Electrospray deposition of polymer thin films for organic light-emitting diodes

Electrospray process was developed for organic layer deposition onto polymer organic light-emitting diode [PLED] devices in this work. An electrospray can be used to produce nanometer-scale thin films by electric repulsion of microscale fine droplets. PLED devices made by an electrospray process were compared with spin-coated ones. The PLED device fabricated by the electrospray process showed maximum current efficiency of 24 cd/A, which was comparable with that of the spin-coating process. The electrospray process required a higher concentration of hole and electron transport materials in the inks than spin-coating processes to achieve PLED maximum performance. Photoluminescence [PL] at 407 nm was observed using electrosprayed poly(N-vinyl carbazole) films, whereas a peak at 410 nm was observed with the spin-coated ones. Similar difference in peak position was observed between aromatic and nonaromatic solvents in the spin-coating process. PLED devices made by the electrospray process showed lower current density than that of spin-coated ones. The PL peak shift and reduced current of electrosprayed films can therefore be attributed to the conformation of the polymer

Hafnium metallocene compounds used as cathode interfacial layers for enhanced electron transfer in organic solar cells

We have used hafnium metallocene compounds as cathode interfacial layers for organic solar cells [OSCs]. A metallocene compound consists of a transition metal and two cyclopentadienyl ligands coordinated in a sandwich structure. For the fabrication of the OSCs, poly[3,4-ethylenedioxythiophene]:poly(styrene sulfonate), poly(3-hexylthiophene-2,5-diyl) + [6,6]-phenyl C61 butyric acid methyl ester, bis-(ethylcyclopentadienyl)hafnium(IV) dichloride, and aluminum were deposited as a hole transport layer, an active layer, a cathode interfacial layer, and a cathode, respectively. The hafnium metallocene compound cathode interfacial layer improved the performance of OSCs compared to that of OSCs without the interfacial layer. The current density-voltage characteristics of OSCs with an interfacial layer thickness of 0.7 nm and of those without an interfacial layer showed power conversion efficiency [PCE] values of 2.96% and 2.34%, respectively, under an illumination condition of 100 mW/cm2 (AM 1.5). It is thought that a cathode interfacial layer of an appropriate thickness enhances the electron transfer between the active layer and the cathode, and thus increases the PCE of the OSCs

Hydrosilylation of Reactive Quantum Dots and Siloxanes for Stable Quantum Dot Films

The reactive acrylate-terminated CdZnSeS/ZnS quantum dots (QDs) were designed and prepared by the effective synthetic route to bond with a siloxane matrix via hydrosilylation. The conventional QD with oleic acid ligands does not have any reactivity, so the QDs were functionalized to assign reactivity for the QDs by the ligand modification of two step reactions. The oleic acid of the QDs was exchanged for hydroxyl-terminated ligands as an intermediate product by one-pot reaction. The hydroxyl-terminated QDs and acrylate-containing isocyanates were combined by nucleophilic addition reaction with forming urethane bonds and terminal acrylate groups. No degradation in quantum yield was observed after ligand exchange, nor following the nucleophilic addition reaction. The modification reactions of ligands were quantitatively controlled and their molecular structures were precisely confirmed by FT-IR and 1H-NMR. The QDs with acrylate ligands were then reacted with hydride-terminated polydimethylsiloxane (H-PDMS) to form a QD-siloxane matrix by thermal curing via hydro-silylation for the first time. The covalent bonding between the QDs and the siloxane matrix led to improvements in the stability against oxygen and moisture. Stability at 85 °C and 85% relative humidity (RH) were both improved by 22% for the QD-connected siloxane QD films compared with the corresponding values for conventional QD-embedded poly(methylmethacrylate) (PMMA) films. The photo-stability of the QD film after 26 h under a blue light-emitting diode (LED) was also improved by 45% in comparison with those of conventional QD-embedded PMMA films

Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas

The sp2-rich hydrogenated amorphous carbon (a-C:H) is widely adopted as hard masks in semiconductor-device fabrication processes. The ion-enhanced etch characteristics of sp2-rich a-C:H films on ion density and ion energy were investigated in CF4 plasmas and O2 plasmas in this work. The etch rate of sp2-rich a-C:H films in O2 plasmas increased linearly with ion density when no bias power was applied, while the fluorocarbon deposition was observed in CF4 plasmas instead of etching without bias power. The etch rate was found to be dependent on the half-order curve of ion energy in both CF4 plasmas and O2 plasmas when bias power was applied. An ion-enhanced etching model was suggested to fit the etch rates of a-C:H in CF4 plasmas and O2 plasmas. Then, the etch yield and the threshold energy for etching were determined based on this model from experimental etch rates in CF4 plasma and O2 plasma. The etch yield of 3.45 was observed in CF4 plasmas, while 12.3 was obtained in O2 plasmas, owing to the high reactivity of O radicals with carbon atoms. The threshold energy of 12 eV for a-C:H etching was obtained in O2 plasmas, while the high threshold energy of 156 eV was observed in CF4 plasmas. This high threshold energy is attributed to the formation of a fluorocarbon layer that protects the a-C:H films from ion-enhanced etching

Residual stress analysis and control of multilayer flexible moisture barrier films with SiNx and Al2O3 layers

In this work, we investigated the residual film stress of barrier layers and its effect on moisture barrier property and flexibility. We have deposited silicon nitride (SiNx) layer by a plasma-enhanced chemical vapor deposition (PECVD) process and aluminum oxide (Al2O3) layer by a spatially-resolved atomic layer deposition (SR-ALD) process on polyethylene naphthalate (PEN) flexible substrates at temperature below 100 °C. Two different types of film structure were fabricated to relieve the residual stress. First, we deposited SiNx layers on the both sides of PEN substrates and investigated residual film stress, water vapor transmission rate (WVTR) and flexibility. The residual stress was greatly reduced from 824 MPa in the single-side deposited SiNx film to 39.54 MPa in the double-side SiNx deposited film at the same total thickness of 600 nm. WVTR was reduced by 68% to 5.93×10-4 g/(m2•day) with a double-sided film from 1.85×10-3 g/(m2•day) with a single-sided SiNx film. The WVTR of the double-sided film was increased by 33% after 1,000 bending at 1.5 cm of radius while that of the single-sided film was increased by 51 % after bending. Second, we fabricated the multilayer structure with alternating of SiNx and Al2O3 layers on one side of PEN substrates. The residual film stress is reduced by 28% from 595.1 MPa in bilayer structure to 432.5 MPa in the 2.5 dyad multilayer structure. The WVTR was also reduced to 1.55×10-4 g/(m2•day) with the 2.5 dyad multilayer structure from 2.6×10-4 g/(m2•day) with the bilayer structure

hBN Flake Embedded Al2O3 Thin Film for Flexible Moisture Barrier

Due to the vulnerability of organic optoelectronic devices to moisture and oxygen, thin-film moisture barriers have played a critical role in improving the lifetime of the devices. Here, we propose a hexagonal boron nitride (hBN) embedded Al2O3 thin film as a flexible moisture barrier. After layer-by-layer (LBL) staking of polymer and hBN flake composite layer, Al2O3 was deposited on the nano-laminate template by spatial plasma atomic layer deposition (PEALD). Because the hBN flakes in Al2O3 thin film increase the diffusion path of moisture, the composite layer has a low water vapor transmission ratio (WVTR) value of 1.8 × 10−4 g/m2 day. Furthermore, as embedded hBN flakes restrict crack propagation, the composite film exhibits high mechanical stability in repeated 3 mm bending radius fatigue tests

Plasma Etching of SiO2 Contact Holes Using Hexafluoroisopropanol and C4F8

This study presents the feasibility of the use of hexafluoroisopropanol (HFIP) as a substitute to perfluorocarbon (PFC) for the plasma etching of SiO2 to confront the continuous increase in demand for PFC emission reduction. SiO2 etching is conducted in HFIP/Ar and C4F8/Ar plasmas, respectively, and its characteristics are compared. The SiO2 etch rates in the HFIP/Ar plasma are higher compared with those in the C4F8/Ar plasma. The thickness of the steady-state fluorocarbon films formed on the surface of SiO2 are lower in the HFIP/Ar plasma compared with in the C4F8/Ar plasma. Higher SiO2 etch rates and thinner fluorocarbon films in the HFIP/Ar plasma are attributed to the oxygen atoms in HFIP, which generate oxygen radicals that react with the fluorocarbon films to turn into volatile products. Due to the higher dissociation of C-F bonds in CF4 compared with in HFIP, the etch rates of SiO2 in the C4F8/Ar plasma increase more rapidly with the magnitude of the bias voltage compared with those in the HFIP/Ar plasma. The etch profiles of the 200 nm diameter SiO2 contact holes with an aspect ratio of 12 show that fairly anisotropic SiO2 contact hole etching was achieved successfully using the HFIP/Ar plasma

Electrical and optical analyses of tandem organic light-emitting diodes with organic charge-generation layer

The electrical and optical properties of tandem organic light-emitting diodes (OLEDs), in which a fluorescent and phosphorescent emitting units are connected by an organic charge-generation layer (CGL), were experimentally analyzed. To investigate the internal properties of the tandem OLEDs, we fabricated and compared two single, two homo-tandem, and two hetero-tandem OLEDs using the fluorescent and phosphorescent units. From the experimental results of the OLEDs obtained at the same current density, the voltage across the CGL as well as the individual emission spectra and luminance of each unit of tandem OLEDs were obtained and compared with the theoretical simulation results. The analysis method proposed in this study can be utilized as a method to verify the accuracy of optical or electrical computer simulation of tandem OLED and it will be useful to understand the overall electrical and optical characteristics of tandem OLEDs