Green Technology in Developing Countries: Creating Accessibility Through a Global Exchange Forum

As they pursue economic development, developing countries possess high demand for processes and technologies that have climate-friendly methods or alternatives. However, these nations currently face barriers to entry because of trade policies and intellectual property regulations that render procurement of these technologies cost-prohibitive. In light of the recent breakdown in negotiations at the United Nations climate conference in Bali to remove tariffs on green technology, a new approach to green technology diffusion should be considered in order to balance the demand among developing nations for fluid technology transfers with the profit-driven needs and intellectual property considerations of technology holders. A potential solution to overcome the high fixed costs of technology diffusion could involve the creation of a global exchange forum in which transnational green technology holders, green venture capitalists, and developing country entrepreneurs could broker for efficient allocation of investment, resources, and technologies

On the Mechanism of the Step Coverage of Blanket Tungsten Chemical Vapor Deposition

In this study, computer modeling of the contact fill process with chemical vapor deposition, (CVD) of tungsten is usedto show the importance of several details on the quality of the fill process. The effect of surface curvature on the stepcoverage of CVD-W has been investigated. It is shown that for contacts with an aspect ratio smaller than one, the effect ofsurface curvature is substantial and actually improves step coverage. Therefore, surface curvature for features with aspectratios smaller than one, should be accounted for in computer simulations of the fill process. For contacts with aspect ratioslarger than one the effect of surface curvature is negligible. It is shown that the size of the void (which will be formed incases of step coverage less than 100%) is a better way to describe the quality of the deposition and the repercussions of thevoid on subsequent process steps such as tungsten etch back. In addition, the size of the void depends for a given set ofdeposition conditions solely on the depth of the contact rather than the contact diameter (for aspect ratios larger than 1.0)

In Situ Growth Rate Measurement of Selective LPCVD of Tungsten

The reflectance measurement during the selective deposition of W on Si covered with an insulator grating is proven tobe a convenient method to monitor the W deposition. The reflectance change during deposition allows the in situ measurementof the deposition rate. The influence of surface roughening due to either the W growth or an etching pretreatmentof the wafer is modeled, as well as the effect of selectivity loss and lateral overgrowth

A test chip for automatic reliability measurements of interconnect vias

A test circuit for electromigration reliability measurements was designed and tested. The device under test (DUT) is a via-hole chain. The test circuit permits simultaneous measurements of a number of DUTs, and a fatal error of one DUT does not influence the measurement results of the other DUTs. Measurements require only a few measurement instruments. Comparing the measurement results of a single DUT io the measurement results of the test circuit shows that the test circuit may be used for reliability measurements

Bioekologi Udang Swallow (Penaeus merguiensis)

This study aims to examine the bioecological aspects of P. merguiensis around the estuary of the Berombang river in terms of growth patterns, the abundance of gonad maturity and condition factors. The method used in this research is purposive sampling. Shrimp sampling was carried out using arad nets which were stocked at low tide. The results showed that the composition of the abundance of the gonadal maturity level of P. merguiensis shrimp at three sampling stations was dominated by immature gonadal shrimp (BMG) to TKG 2. The growth pattern of P. merguiensis shrimp based on the length-body weight relationship in the Berombang river was classified as positive allometric. Fulton condition factor (K) ranged from 0.14 to 4.68, with an average total body length ranging from 2.35 to 13.70 cm. In conclusion, the condition factor of P. merguiensis shrimp in the Berombang river was classified as a plump category with shrimp weight gain being faster than body length growth, with female plumpness being greater than males. Keywords:  Fulton Condition Factor, Gonad Maturity, Growth Pattern, P. merguiensis, Berombang Rive