miR2118-dependent U-rich phasiRNA production in rice anther wall development

Reproduction-specific small RNAs are vital regulators of germline development in animals and plants. MicroRNA2118 (miR2118) is conserved in plants and induces the production of phased small interfering RNAs (phasiRNAs). To reveal the biological functions of miR2118, we describe here rice mutants with large deletions of the miR2118 cluster. Our results demonstrate that the loss of miR2118 causes severe male and female sterility in rice, associated with marked morphological and developmental abnormalities in somatic anther wall cells. Small RNA profiling reveals that miR2118-dependent 21-nucleotide (nt) phasiRNAs in the anther wall are U-rich, distinct from the phasiRNAs in germ cells. Furthermore, the miR2118-dependent biogenesis of 21-nt phasiRNAs may involve the Argonaute proteins OsAGO1b/OsAGO1d, which are abundant in anther wall cell layers. Our study highlights the site-specific differences of phasiRNAs between somatic anther wall and germ cells, and demonstrates the significance of miR2118/U-phasiRNA functions in anther wall development and rice reproduction

Effect of an External Electric Field on the Kinetics of Dislocation-Free Growth of Tetragonal Hen Egg White Lysozyme Crystals

Dislocation-free tetragonal hen egg white (HEW) lysozyme crystals were grown from a seed crystal in a cell. The rates of tetragonal HEW lysozyme crystal growth normal to the (110) and (101) faces with and without a 1-MHz external electric field were measured. A decrease in the typical growth rates of the crystal measured under an applied field at 1 MHz was observed, although the overall driving force increased. Assuming that the birth and spread mechanism of two-dimensional nucleation occurs, an increase in the effective surface energy of the step ends was realized in the presence of the electric field, which led to an improvement in the crystal quality of the tetragonal HEW lysozyme crystals. This article also discusses the increase in the effective surface energy of the step ends with respect to the change in the entropy of the solid

Plasma–Chemical Hybrid NOx Removal in Flue Gas from Semiconductor Manufacturing Industries Using a Blade-Dielectric Barrier-Type Plasma Reactor

NOx is emitted in the flue gas from semiconductor manufacturing plants as a byproduct of combustion for abatement of perfluorinated compounds. In order to treat NOx emission, a combined process consisting of a dry plasma process using nonthermal plasma and a wet chemical process using a wet scrubber is performed. For the dry plasma process, a dielectric barrier discharge plasma is applied using a blade-barrier electrode. Two oxidation methods, direct and indirect, are compared in terms of NO oxidation efficiency. For the wet chemical process, sodium sulfide (Na2S) is used as a reducing agent for the NO2. Experiments are conducted by varying the gas flow rate and input power to the plasma reactor, using NO diluted in air to a level of 300 ppm to simulate exhaust gas from semiconductor manufacturing. At flow rates of ≤5 L/min, the indirect oxidation method verified greater removal efficiency than the direct oxidation method, achieving a maximum NO conversion rate of 98% and a NOx removal rate of 83% at 29.4 kV and a flow rate of 3 L/min. These results demonstrate that the proposed combined process consisting of a dry plasma process and wet chemical process is promising for treating NOx emissions from the semiconductor manufacturing industry

Effect of grain boundary grooves at the crystal/melt interface on impurity accumulation during the unidirectional growth of multicrystalline silicon

International audienceImpurity accumulation at the grain boundaries in multicrystalline Si (mc-Si) was investigated by in situ observation of the crystal/melt interface, analysis of the grain boundary characteristics, and measurement of impurity concentrations. The impurity concentration was higher at grain boundaries that formed a groove at the crystal/ melt interface than that at regions which did not form a groove at the crystal/melt interface. We conclude that groove formation at the crystal/melt interface is the cause of impurity accumulation at the grain boundary

Effect of an External Electric Field on the Kinetics of Dislocation-Free Growth of Tetragonal Hen Egg White Lysozyme Crystals

Dislocation-free tetragonal hen egg white (HEW) lysozyme crystals were grown from a seed crystal in a cell. The rates of tetragonal HEW lysozyme crystal growth normal to the (110) and (101) faces with and without a 1-MHz external electric field were measured. A decrease in the typical growth rates of the crystal measured under an applied field at 1 MHz was observed, although the overall driving force increased. Assuming that the birth and spread mechanism of two-dimensional nucleation occurs, an increase in the effective surface energy of the step ends was realized in the presence of the electric field, which led to an improvement in the crystal quality of the tetragonal HEW lysozyme crystals. This article also discusses the increase in the effective surface energy of the step ends with respect to the change in the entropy of the solid

Technique for High-Quality Protein Crystal Growth by Control of Subgrain Formation under an External Electric Field

X-ray diffraction (XRD) rocking-curves were measured for tetragonal hen egg white (HEW) lysozyme crystals grown with and without application of an external electric field, and the crystal quality was assessed according to the full width at half-maximums (FWHMs) of each rocking-curve profile. The average FWHMs for tetragonal HEW lysozyme crystals grown with an external electric field at 1 MHz were smaller than those for crystals grown without, especially for the 12 12 0 reflection. The crystal homogeneity of the tetragonal HEW lysozyme crystals was also improved under application of an external electric field at 1 MHz, compared to that without. Improvement of the crystal quality of tetragonal HEW lysozyme crystals grown under an applied field is discussed with a focus on subgrain formation. In addition, the origin of subgrain misorientation is also discussed with respect to the incorporation of impurities into protein crystals