Radiative Recombination Spectra of Heavily p-Typeδ-Doped GaAs/AlAs MQWs

We present a study of the photoluminescence properties of heavily Be δ-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈3 × 1012 cm-2

Radiative recombination spectra, of heavily p-type δ-doped GaAs/AlAs MQWs

We present a study of the photoluminescence properties of heavily Be δ-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈3 × 1012 cm-2

Experimental study of optical transitions in be-doped GaAs/AlAs multiple quantum wells

We present a photoluminescence study of optical transitions in Be acceptor-doped GaAs/AlAs multiple quantum wells at room and liquid nitrogen temperatures. We investigate excitonic spectra and reveal acceptor-impurity induced effects in multiple quantum wells having different width