HTSL-Kantenbolometer fuer IR-Spektrometer. Teilvorhaben: Devicetechnologie Abschlussbericht

Available from TIB Hannover: F00B753 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung und Forschung (BMBF), Bonn (Germany)DEGerman

Technologie thermischer Strahlungsdetektoren auf HTSL-Basis fuer radiometrischer Anwendungen. Device- und Aufbautechnologie Schlussbericht

Die technologischen Grundlagen empfindlicher und spektral breitbandiger Strahlungsempfaenger (Bolometer) auf HTSL-Basis wurden im Rahmen eines Verbundprojektes entwickelt. Funktionsmuster der Bolometerstrukturen weisen eine Detektivitaet von D*=3,8x10"9 cm Hz"1"/"2 W"-"1 bei einer Zeitkonstanten von T=0,4 ms auf. Das Verbundprojekt gliederte sich in drei getrennte Arbeitsbereiche: (a) Device- und Aufbautechnologie, (b) HTSL-Schichtherstellung und (c) Systemtechnik. Die entwickelte Technologiekette besteht bei der Device-und Aufbautechnologie (Teil a) aus folgenden Schritten: 1. Membranherstellung: Eine 1x1 mm"2 grosse und 1 #mu#m dicke Membranen wurden mit einem KOH-Aetzprozess mikromechanisch in das Si-Substrat geaetzt. Dazu wurde ein Bor-dotierter Aetzstopp und Si_3N_4 auf SiO_2 als Aetzmaske verwendet. 2. Pufferschichtepitaxie: Nach dem Entfernen des SiO_2, der chemischer Oxidation und der Rekonstruktion der Si-Oberflaeche durch Desorption im UHV bei 650 C wurden epitaktische Pufferschichten (YSZ, YSZ/Y_2O_3 oder YSZ/CeO_2) mittels Elektronenstrahlverdampfer aus dem Si-Substrat abgeschieden. 3. Strukturierung der HTSL-Schichten: Durch die Strukturierung der Pufferschicht (Argon-Sputteraetzprozess) vor der HTSL-Abscheidung ('Inhibit-Technik') kann die Technologiekette in drei aufeinanderfolgende Blocks unterteilt werden (Siliziumtechnologie, HTSL-Technologie und Montagetechnik). (orig./MM)The technology of highly sensitive broadband thermal radiation detectors (bolometers) on HTSC-basis has been developed within a joined research projekt. Prototypes of bolometer structures reveal a detectivity of D*=3,8x10"9 cm Hz"1"/"2 W"-"1 and a timeconstant of T=0,4 ms. The joined research projekt has three separate divisions: (a) Device- and assembly-technology (IHT, University of Hannover, Germany), (b) HTSC-deposition (IPHT, Jena, Germany), and (c) system engineering (TZN, Unterluess, Germany). Processing of bolometers in device and assembly-technology (part a) contains mainly the following steps: 1. Membrane fabrication: Membranes of 1x1 mm"2 area and 1 #mu#m thickness were micromachined in KOH, using borondoping as an etch-stop and Si_3N_4 on SiO_2 as an etch mask. 2. Buffer layer epitaxy: After etching of SiO_2, chemical oxidation, and reconstruction of the silicon surface by desorption in UHV at 650 C, epitaxial buffer layers (YSZ, YSZ/Y_2O_3 and YSZ/CeO_2) were deposited by electron beam evaporation. Thin film quality on bulk and membrane substrates was investigated by LEED, XRD, RBS, and HRTEM. 3. HTSC-structuring: By structuring of the buffer layer (Ar-sputter-etch) before HTSC-deposition ('inhibit-technology') processing is devided into three subsequent blocks (silicon technology, HTSC technology, and packaging and interconnection). Thus processing steps of the different technologies can be performed at different locations. (orig./MM)Available from TIB Hannover: F96B123+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Informationstechnologie: Schwerpunkt Submikron/Leitende Schichten Leitbahnen und Kontakte fuer grossintegrierte Schaltungen. Schlussbericht

With 35 refs., 20 tabs., 117 figs.Available from TIB Hannover: F93B199 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman

Entwicklung und Anwendung von Biosensoren in der Biotechnologie Nr. 5 Schlussbericht (Broschuere)

State of the art: Biosensores have been developed, but seldom applied in the biotechnology. Aim: Development of reliable biosensors and their application in the biotechnological practice. Method: Following sensors have been developed, tested and applied for process monitoring: pH- and fluoride sensitive field effect transistors (pH-FET, pF-FETs) and oxygen sensitive optodes. Heterogeneous affinity sensors were developed as well as applied for monitoring process variables in animal cell cultivations. Animal cell cultivation processes were optimized by these sensors. Knowledge-based fault detection and diagnosis systems were developed. Results: The optodes, PH-FETs, pF-FETs and affinity sensors were applied for monitoring of cultivations with bacteria, yeasts, fungi and animal cells with success. By means of the process monitoring the productivity of the blood factor AT III was improved. Another pH-(DLC)-, pO_2-, phosphate-, and H_2O_2-sensitive ISFET- and EIS-sensors were developed as well. Conclusions/applications: The biosensors developed in the frame of this project have been used for off-line and on-line process monitoring with success. They are suitable for bioprocess monitoring in laboratories and pilot plants. A company was founded for the commercialisation of the oxygen-optode. (orig.)Available from TIB Hannover: F97B689 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

JESSI project: advanced technolgoy for 0.25 #mu#m CMOS and below. Subproject: process modules evaluation and integration. Theme 5 Multilevel metallization. Final report

Titanium- and cobaltdisilicide were investigated as material for shallow, low-resistive contacts in a CMOS-metallization system. ITM and DDS were used as self-aligned manufacturing processes. The TiSi_2- and CoSi_2-contact-systems were compared concerning manufacturing process and electrical and physical properties. The CoSi_2-contact-system shows the best properties. CVD-W was used to fill up vias and interconnects. To this a selective tungsten CVD process on CoSi_2 and a blanket deposition process were developed. Due to the excellent selectivity concerning the contact filling, a planarization effect was achieved. Accelerated tests show a high current-carrying capacity for the interconnects. Electromigration was identified as degradation mechanism. PECVD- and TEOS-PECVD-processes were investigated for the deposition of intermetal-dielectrics. An electrical and physical characterization of the layers have been performed. Processes with good step coverage and processes with a planarization effect were specified. Etch-back procedures using photo-resist and spin-on-techniques with various polyimides and a spin-on-glass were investigated in view of a planarization of the chip surface. The best results were achieved using the spin-on-technique with polyimide. (orig.)SIGLEAvailable from TIB Hannover: F94B1507+a+b / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

Fortschrittliche Kupfer-Metallisierungssysteme (FOKUM). Teilvorhaben: Prozesstechnologie und Zuverlaessigkeit von Kupfermetallisierungen Schlussbericht

Available from TIB Hannover: F01B152+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Untersuchung zukuenftiger Leitbahntechnologien. Teilvorhaben: Forschungs-und Entwicklungsvertrag mit der TU Chemnitz Schlussbericht

Available from TIB Hannover: F98B1560+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Fortschrittliche Kupfer-Metallisierungssysteme (FOKUM). Teilvorhaben: Prozess- und Verfahrensentwicklung fuer die Hoechstintegration Schlussbericht

Available from TIB Hannover: F01B930+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman

Vorprojekt Integriertes Mikroanalysensystem - VIMAS Abschlussbericht

SIGLEAvailable from TIB Hannover: F99B771+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman