Organic photovoltaic bulk heterojunctions with spatially varying composition

Models of organic bulk heterojunction photovoltaics which include the effect of spatially varying composition of donor/acceptor materials are developed and analyzed. Analytic expressions for the current-voltage relation in simplified cases show that the effect of varying blend composition on charge transport is minimal. Numerical results for various blend compositions, including the experimentally relevant composition of a donor-rich region near the cathode (a "skin layer" of donor material), show that the primary effect of this variation on device performance derives from its effect on photocharge generation. The general relation between the geometry of the blend and its effect on performance is given explicitly. The analysis shows that the effect of a skin layer on device performance is small.Comment: 6 pages, 5 figure

Minority-carrier dynamics in semiconductors probed by two-photon microscopy

Two-photon time-resolved photoluminescence has been recently applied to various semiconductor devices to determine carrier lifetime and surface recombination velocities. So far the theoretical modeling activity has been mainly limited to the commonly used one-photon counterpart of the technique. Here we provide the analytical solution to a 3D diffusion equation that describes two-photon microscopy in the low-injection regime. We focus on a system with a single buried interface with enhanced recombination, and analyze how transport, bulk and surface recombinations influence photoluminescence decays. We find that bulk measurements are dominated by diffusion at short times and by bulk recombination at long times. Surface recombination modifies bulk signals when the optical spot is less than a diffusion length away from the probed interface. In addition, the resolution is increased as the spot size is reduced, which however makes the signal more sensitive to diffusion.Comment: 4 pages, 4 figures, IEEE PVSC 2016 proceeding pape

Current-induced torques due to compensated antiferromagnets

We analyse the influence of current induced torques on the magnetization configuration of a ferromagnet in a circuit containing a compensated antiferromagnet. We argue that these torques are generically non-zero and support this conclusion with a microscopic NEGF calculation for a circuit containing antiferromagnetic NiMn and ferromagnetic Co layers. Because of symmetry dictated differences in the form of the current-induced torque, the phase diagram which expresses the dependence of ferromagnet configuration on current and external magnetic field differs qualitatively from its ferromagnet-only counterpart.Comment: 4 pages, 5 figure