106 research outputs found
Epitaxial Growth of an n-type Ferromagnetic Semiconductor CdCr2Se4 on GaAs(001) and GaP(001)
We report the epitaxial growth of CdCr2Se4, an n-type ferromagnetic
semiconductor, on both GaAs and GaP(001) substrates, and describe the
structural, magnetic and electronic properties. Magnetometry data confirm
ferromagnetic order with a Curie temperature of 130 K, as in the bulk material.
The magnetization exhibits hysteretic behavior with significant remanence, and
an in-plane easy axis with a coercive field of ~125 Oe. Temperature dependent
transport data show that the films are semiconducting in character and n-type
as grown, with room temperature carrier concentrations of n ~ 1 x 10^18 cm-3.Comment: 12 pages, 3 figure
Optoelectric spin injection in semiconductor heterostructures without ferromagnet
We have shown that electron spin density can be generated by a dc current
flowing across a junction with an embedded asymmetric quantum well. Spin
polarization is created in the quantum well by radiative electron-hole
recombination when the conduction electron momentum distribution is shifted
with respect to the momentum distribution of holes in the spin split valence
subbands. Spin current appears when the spin polarization is injected from the
quantum well into the -doped region of the junction. The accompanied
emission of circularly polarized light from the quantum well can serve as a
spin polarization detector.Comment: 2 figure
The Static and Dynamic Lattice Changes Induced by Hydrogen Adsorption on NiAl(110)
Static and dynamic changes induced by adsorption of atomic hydrogen on the
NiAl(110) lattice at 130 K have been examined as a function of adsorbate
coverage. Adsorbed hydrogen exists in three distinct phases. At low coverages
the hydrogen is itinerant because of quantum tunneling between sites and
exhibits no observable vibrational modes. Between 0.4 ML and 0.6 ML, substrate
mediated interactions produce an ordered superstructure with c(2x2) symmetry,
and at higher coverages, hydrogen exists as a disordered lattice gas. This
picture of how hydrogen interacts with NiAl(110) is developed from our data and
compared to current theoretical predictions.Comment: 36 pages, including 12 figures, 2 tables and 58 reference
Epitaxial Growth of the Diluted Magnetic Semiconductors CryGe1-y and CryMnxGe1-x-y
We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin films
on GaAs(001), describe the structural and transport properties, and compare the
measured magnetic properties with those predicted by theory. The samples are
strongly p-type, and hole densities increase with Cr concentration. The
CryGe1-y system remains paramagnetic for the growth conditions and low Cr
concentrations employed (y < 0.04), consistent with density functional theory
predictions. Addition of Cr into the ferromagnetic semiconductor MnxGe1-x host
systematically reduces the Curie temperature and total magnetization.Comment: 4 pages, 4 figures, submitted to Applied Physics Letter
Electric-field dependent spin diffusion and spin injection into semiconductors
We derive a drift-diffusion equation for spin polarization in semiconductors
by consistently taking into account electric-field effects and nondegenerate
electron statistics. We identify a high-field diffusive regime which has no
analogue in metals. In this regime there are two distinct spin diffusion
lengths. Furthermore, spin injection from a ferromagnetic metal into a
semiconductor is enhanced by several orders of magnitude and spins can be
transported over distances much greater than the low-field spin diffusion
length.Comment: 5 pages, 3 eps figure
- …