Drell-Yan plus missing energy as a signal for extra dimensions

We explore the search sensitivity for signals of large extra dimensions at hadron colliders via the Drell-Yan process pp -> l+ l- + E_T(miss) X (l = e,mu) where the missing transverse energy is the result of escaping Kaluza-Klein gravitons. We find that one is able to place exclusion limits on the gravity scale up to 560 GeV at the Fermilab Tevatron, and to 4.0 (3.3) TeV at the CERN LHC, for n = 3 (4) extra dimensions.Comment: 5 pages, 2 PS figs, revised verseion to be published in Physics Letters

Variable-speed tail rotors for helicopters with variable-speed main rotors

Variable tail rotor speed is investigated as a method for reducing tail rotor power, and improving helicopter performance. A helicopter model able to predict the main rotor and tail rotor powers is presented, and the flight test data of the UH-60A helicopter is used for validation. The predictions of the main and tail rotor powers are generally in good agreement with flight tests, which justifies the use of the present method in analyzing main and tail rotors. Reducing the main rotor speed can result in lower main rotor power at certain flight conditions. However, it increases the main rotor torque and the corresponding required tail rotor thrust to trim, which then decreases the yaw control margin of the tail rotor. In hover, the tail rotor may not be able to provide enough thrust to counter the main rotor torque, if it is slowed to follow the main rotor speed. The main rotor speed corresponding to the minimum main rotor power increases, if the change of tail rotor power in hover is considered. As a helicopter translated to cruise, the induced power decreases, and the profile power increases, with the profile power dominating the tail rotor. Reducing the tail rotor speed in cruise reduces the profile power to give a 37% reduction in total tail rotor power and a 1.4% reduction to total helicopter power. In high speed flight, varying the tail rotor speed is ineffective for power reduction. The power reduction obtained by the variable tail rotor speed is reduced for increased helicopter weight

Atomic-Layer-Deposited Al2O3 on Bi2Te3 for Topological Insulator Field-Effect Transistors

We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD Al2O3 is uniformly grown on this layer-structured channel material. Electrical characterization reveals that the right selection of ALD precursors and the related surface chemistry play a critical role in device performance of Bi2Te3 based TI FETs. We realize both top-gate and bottom-gate control on these devices, and the highest modulation rate of 76.1% is achieved by using simultaneous dual gate control.Comment: 4 pages, 3 figure

A Fast Blind Impulse Detector for Bernoulli-Gaussian Noise in Underspread Channel

The Bernoulli-Gaussian (BG) model is practical to characterize impulsive noises that widely exist in various communication systems. To estimate the BG model parameters from noise measurements, a precise impulse detection is essential. In this paper, we propose a novel blind impulse detector, which is proven to be fast and accurate for BG noise in underspread communication channels.Comment: v2 to appear in IEEE ICC 2018, Kansas City, MO, USA, May 2018 Minor erratums added in v

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectric. Our C-V study of MOSFET structures shows good interface between 2D MoS2 crystal and ALD Al2O3. Maximum drain currents using back-gates and top-gates are measured to be 7.07mA/mm and 6.42mA/mm at Vds=2V with a channel width of 3 {\mu}m, a channel length of 9 {\mu}m, and a top-gate length of 3 {\mu}m. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm^2/Vs. The highest current on/off ratio is over 10^8.Comment: submitted to IEEE Electron Device Letter