147 research outputs found
Knight shift detection using gate-induced decoupling of the hyperfine interaction in quantum Hall edge channels
A method for the observation of the Knight shift in nanometer-scale region in
semiconductors is developed using resistively detected nuclear magnetic
resonance (RDNMR) technique in quantum Hall edge channels. Using a gate-induced
decoupling of the hyperfine interaction between electron and nuclear spins, we
obtain the RDNMR spectra with or without the electron-nuclear spin coupling. By
a comparison of these two spectra, the values of the Knight shift can be given
for the nuclear spins polarized dynamically in the region between the relevant
edge channels in a single two-dimensional electron system, indicating that this
method has a very high sensitivity compared to a conventional NMR technique.Comment: 4 pages, 4 figures, to appear in Applied Physics Letter
Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature
We study the effect of the shape anisotropy on the magnetic domain
configurations of a ferromagnetic semiconductor (Ga,Mn)As/GaAs(001) epitaxial
wire as a function of temperature. Using magnetoresistance measurements, we
deduce the magnetic configurations and estimate the relative strength of the
shape anisotropy compared with the intrinsic anisotropies. Since the intrinsic
anisotropy is found to show a stronger temperature dependence than the shape
anisotropy, the effect of the shape anisotropy on the magnetic domain
configuration is relatively enhanced with increasing temperature. This
information about the shape anisotropy provides a practical means of designing
nanostructured spin electronic devices using (Ga,Mn)As.Comment: 4 pages, 4 figures, to appear in J. Appl. Phy
Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device
We study the resistively detected nuclear magnetic resonance (NMR) in an
AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine
interaction between electron and nuclear spins is modulated by tuning a
position of the two-dimensional electron systems with respect to the polarized
nuclear spins using the side-gate voltages. The NMR frequency is systematically
controlled by the gate-tuned technique in a semiconductor device.Comment: 3 pages, 4 figures, submitted to Appl. Phys. Let
Mixed magnetic phases in (Ga,Mn)As epilayers
Two different ferromagnetic-paramagnetic transitions are detected in
(Ga,Mn)As/GaAs(001) epilayers from ac susceptibility measurements: transition
at a higher temperature results from (Ga,Mn)As cluster phases with [110]
uniaxial anisotropy and that at a lower temperature is associated with a
ferromagnetic (Ga,Mn)As matrix with cubic anisotropy. A change in the
magnetic easy axis from [100] to [110] with increasing temperature can be
explained by the reduced contribution of cubic anisotropy to the magnetic
properties above the transition temperature of the (Ga,Mn)As matrix
Effect of Ga irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers
We report on the magnetic and magnetotransport properties of ferromagnetic
semiconductor (Ga,Mn)As modified by Ga ion irradiation using focused ion
beam. A marked reduction in the conductivity and the Curie temperature is
induced after the irradiation. Furthermore, an enhanced negative
magnetoresistance (MR) and a change in the magnetization reversal process are
also demonstrated at 4 K. Raman scattering spectra indicate a decrease in the
concentration of hole carriers after the irradiation, and a possible origin of
the change in the magnetic properties is discussed
Ion Irradiation Control of Ferromagnetism in (Ga,Mn)As
We report on a promising approach to the artificial modification of
ferromagnetic properties in (Ga,Mn)As using a Ga focused ion beam (FIB)
technique. The ferromagnetic properties of (Ga,Mn)As such as magnetic
anisotropy and Curie temperature can be controlled using Ga ion
irradiation, originating from a change in hole concentration and the
corresponding systematic variation in exchange interaction between Mn spins.
This change in hole concentration is also verified using micro-Raman
spectroscopy. We envisage that this approach offers a means of modifying the
ferromagnetic properties of magnetic semiconductors on the micro- or nano-meter
scale.Comment: 4 pages, 4 figures, to appear in Jpn. J. Appl. Phys. (Part 2 Letters
Magnetic anisotropy switching in (Ga,Mn)As with increasing hole concentration
We study a possible mechanism of the switching of the magnetic easy axis as a
function of hole concentration in (Ga,Mn)As epilayers. In-plane uniaxial
magnetic anisotropy along [110] is found to exceed intrinsic cubic
magnetocrystalline anisotropy above a hole concentration of p = 1.5 * 10^21
cm^-3 at 4 K. This anisotropy switching can also be realized by post-growth
annealing, and the temperature-dependent ac susceptibility is significantly
changed with increasing annealing time. On the basis of our recent scenario
[Phys. Rev. Lett. 94, 147203 (2005); Phys. Rev. B 73, 155204 (2006).], we
deduce that the growth of highly hole-concentrated cluster regions with [110]
uniaxial anisotropy is likely the predominant cause of the enhancement in [110]
uniaxial anisotropy at the high hole concentration regime. We can clearly rule
out anisotropic lattice strain as a possible origin of the switching of the
magnetic anisotropy.Comment: 5 pages, 4 figures, to appear in Phys. Rev.
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