Efficient Terahertz Detection with Perfectly-Absorbing Metasurface

We demonstrate a unique photoconductive design for terahertz (THz) detection based on a perfectly absorbing, all-dielectric metasurface. Our design exploits Mie resonances in electrically connected cubic resonators fabricated in low-temperature grown (LT) GaAs. Experimentally, the detector achieves very high contrast between ON/OFF conductivity states (107) whilst also requiring extremely low optical power for optimal operation (100 muW). We find that the Mie resonances dissipate sufficiently fast and maintain the detection bandwidth up to 3 THz

Terahertz detectors based on all-dielectric photoconductive metasurfaces

Performance of terahertz (THz) photoconductive devices, including detectors and emitters, has been improved recently by means of plasmonic nanoantennae and gratings. However, plasmonic nanostructures introduce Ohmic losses, which limit gains in device performance. In this presentation, we discuss an alternative approach, which eliminates the problem of Ohmic losses. We use all-dielectric photoconductive metasurfaces as the active region in THz switches to improve their efficiency. In particular, we discuss two approaches to realize perfect optical absorption in a thin photoconductive layer without introducing metallic elements. In addition to providing perfect optical absorption, the photoconductive channel based on all-dielectric metasurface allows us to engineer desired electrical properties, specifically, fast and efficient conductivity switching with very high contrast. This approach thus promises a new generation of sensitive and efficient THz photoconductive detectors. Here we demonstrate and discuss performance of two practical THz photoconductive detectors with integrated all-dielectric metasurfaces

Perfectly-absorbing photoconductive metasurfaces for THz applications

Ultrafast switching of photoconductivity is essential for many terahertz (THz) technologies, however this process is inefficient. Recently developed concepts of all-dielectric metasurfaces can improve efficiency of ultrafast switches, overcoming material limitations, reducing the thickness of the photoconductive region and lowering optical power requirements for THz devices. We will consider two types of perfectly absorbing metasurfaces compatible with the photoconductive switch architecture and discuss performance of THz detectors with integrated metasurfaces. We will show that optical power level required for optimum operation for these THz detectors is more than one order of magnitude lower in comparison to devices without metasurfaces

Sensitivity and Noise in THz Photoconductive Metasurface Detectors

Photoconductive antenna THz detectors based on highly absorbing LT-GaAs metasurfaces enable high sensitivity and high signal-to-noise ratio (> 106) at optical gate powers as low as 5 μW. By investigating the dependence of detector performance on optical gate power, we compare several metasurface detectors with standard PCAs and develop a general model for quantifying the sensitivity and optimal gate power for detector operation. We also show that the LT-GaAs metasurface can even enhance sub bandgap absorption, enabling the use of these detectors in telecom wavelength systems

Perfect absorption in GaAs metasurfaces near the bandgap edge

Perfect optical absorption occurs in a metasurface that supports two degenerate and critically-coupled modes of opposite symmetry. The challenge in designing a perfectly absorbing metasurface for a desired wavelength and material stems from the fact that satisfying these conditions requires multi-dimensional optimization often with parameters affecting optical resonances in non-trivial ways. This problem comes to the fore in semiconductor metasurfaces operating near the bandgap wavelength, where intrinsic material absorption varies significantly. Here we devise and demonstrate a systematic process by which one can achieve perfect absorption in GaAs metasurfaces for a desired wavelength at different levels of intrinsic material absorption, eliminating the need for trial and error in the design process. Using this method, we show that perfect absorption can be achieved not only at wavelengths where GaAs exhibits high absorption, but also at wavelengths near the bandgap edge. In this region, absorption is enhanced by over one order of magnitude compared a layer of unstructured GaAs of the same thickness

Nonlinear Terahertz Generation in Semiconductor Metasurfaces

We demonstrate ultra-thin semiconductor metasurfaces for generation of THz pulses. By investigating the dependence of the THz amplitude and phase on excitation field polarization and crystal orientation, we deduce that the underlying THz emission mechanism in metasurfaces differs from bulk semiconductor wafers with second order nonlinearity playing a dominant role. The metasurface enables control of the THz phase and can therefore be used to spatially structure the THz emitted field. We use this effect to design and demonstrate a metasurface which simultaneously emits and focusses THz pulses

Terahertz Generation from GaAs Metasurfaces: Role of Surface Nonlinearity

We show that a GaAs metasurface can generate THz radiation with comparable efficiency to a bulk GaAs crystal. We attribute the enhanced generation to second order nonlinearity with the surface making a strong contribution

Cisplatin-induced emesis: systematic review and meta-analysis of the ferret model and the effects of 5-HT3 receptor antagonists

PURPOSE: The ferret cisplatin emesis model has been used for ~30 years and enabled identification of clinically used anti-emetics. We provide an objective assessment of this model including efficacy of 5-HT(3) receptor antagonists to assess its translational validity. METHODS: A systematic review identified available evidence and was used to perform meta-analyses. RESULTS: Of 182 potentially relevant publications, 115 reported cisplatin-induced emesis in ferrets and 68 were included in the analysis. The majority (n = 53) used a 10 mg kg(−1) dose to induce acute emesis, which peaked after 2 h. More recent studies (n = 11) also used 5 mg kg(−1), which induced a biphasic response peaking at 12 h and 48 h. Overall, 5-HT(3) receptor antagonists reduced cisplatin (5 mg kg(−1)) emesis by 68% (45–91%) during the acute phase (day 1) and by 67% (48–86%) and 53% (38–68%, all P < 0.001), during the delayed phase (days 2, 3). In an analysis focused on the acute phase, the efficacy of ondansetron was dependent on the dosage and observation period but not on the dose of cisplatin. CONCLUSION: Our analysis enabled novel findings to be extracted from the literature including factors which may impact on the applicability of preclinical results to humans. It reveals that the efficacy of ondansetron is similar against low and high doses of cisplatin. Additionally, we showed that 5-HT(3) receptor antagonists have a similar efficacy during acute and delayed emesis, which provides a novel insight into the pharmacology of delayed emesis in the ferret