Oxygen reduction activity on perovskite oxide surfaces: a comparative first-principle study of LaMnO3_3, LaFeO3_3 and LaCrO3_3

The understanding of oxygen reduction reaction (ORR) activity on perovskite oxide surfaces is essential for promising future fuel cell applications. We report a comparative study of ORR mechanisms on La$B$O$_3$ ($B$=Mn, Fe, Cr) surfaces by first-principles calculations based on density functional theory (DFT). Results obtained from varied DFT methods such as generalized gradient approximation(GGA), GGA+$U$ and the hybrid Hartree-Fock density functional method are reported for comparative purposes. We find that the results calculated from hybrid-functional method suggest that the order of ORR activity is LaMnO$_3$ $>$ LaCrO$_3$ $>$ LaFeO$_3$, which is in better agreement with recent experimental results (Suntivich \textit{et al.}, Nature Chemistry 3, 546 (2011)) than those using the GGA or GGA+$U$ method.Comment: submitte

Does Silicene on Ag(111) Have a Dirac Cone?

We investigate the currently debated issue of the existence of the Dirac cone in silicene on an Ag(111) surface, using first-principles calculations based on density functional theory to obtain the band structure. By unfolding the band structure in the Brillouin zone of a supercell to that of a primitive cell, followed by projecting onto Ag and silicene subsystems, we demonstrate that the Dirac cone in silicene on Ag(111) is destroyed. Our results clearly indicate that the linear dispersions observed in both angular-resolved photoemission spectroscopy (ARPES) [P. Vogt et al, Phys. Rev. Lett. 108, 155501 (2012)] and scanning tunneling spectroscopy (STS) [L. Chen et al, Phys. Rev. Lett. 109, 056804 (2012)] come from the Ag substrate and not from silicene.Comment: 5 pages, 3 figure

First-principles Simulations of a Graphene Based Field-Effect Transistor

We improvise a novel approach to carry out first-principles simulations of graphene-based vertical field effect tunneling transistors that consist of a graphene$|${\it h}-BN$|$graphene multilayer structure. Within the density functional theory framework, we exploit the effective screening medium (ESM) method to properly treat boundary conditions for electrostatic potentials and investigate the effect of gate voltage. The distribution of free carriers and the band structure of both top and bottom graphene layers are calculated self-consistently. The dielectric properties of {\it h}-BN thin films sandwiched between graphene layers are computed layer-by-layer following the theory of microscopic permittivity. We find that the permittivities of BN layers are very close to that of crystalline {\it h}-BN. The effect of interface with graphene on the dielectric properties of {\it h}-BN is weak, according to an analysis on the interface charge redistribution.Comment: 6 pages, 6 figure

Electron Transport Through Ag-Silicene-Ag Junctions

For several years the electronic structure properties of the novel two-dimensional system silicene have been studied extensively. Electron transport across metal-silicence junctions, however, remains relatively unexplored. To address this issue, we developed and implemented a theoretical framework that utilizes the tight-binding Fisher-Lee relation to span non-equilibrium Green's function (NEGF) techniques, the scattering method, and semiclassical Boltzmann transport theory. Within this hybrid quantum-classical, two-scale framework, we calculated transmission and reflection coefficients of monolayer and bilayer Ag-silicene-Ag junctions using the NEGF method in conjunction with density functional theory; derived and calculated the group velocities; and computed resistance using the semi-classical Boltzmann equation. We found that resistances of these junctions are $\sim${} 0.08 \fom for monolayer silicene junctions and $\sim${} 0.3 \fom for bilayer ones, factors of $\sim$8 and $\sim$2, respectively, smaller than Sharvin resistances estimated via the Landauer formalism.Comment: 5 pages, 4 figure

Using Light-Switching Molecules to Modulate Charge Mobility in a Quantum Dot Array

We have studied the electron hopping in a two-CdSe quantum dot system linked by an azobenzene-derived light-switching molecule. This system can be considered as a prototype of a QD supercrystal. Following the computational strategies given in our recent work [Chu et al. J. Phys. Chem. C 115, 21409 (2011)], we have investigated the effects of molecular attachment, molecular isomer (trans and cis) and QD size on electron hopping rate using Marcus theory. Our results indicate that molecular attachment has a large impact on the system for both isomers. In the most energetically favorable attachment, the cis isomer provides significantly greater coupling between the two QDs and hence the electron hopping rate is greater compared to the trans isomer. As a result, the carrier mobility of the QD array in the low carrier density, weak external electric field regime is several orders of magnitude higher in the cis compared to the trans configuration. This is the first demonstration of mobility modulation using QDs and azobenzene that could lead to a new type of switching device.Comment: 8 pages, 3 figure

Dynamics of social contagions with memory of non-redundant information

A key ingredient in social contagion dynamics is reinforcement, as adopting a certain social behavior requires verification of its credibility and legitimacy. Memory of non-redundant information plays an important role in reinforcement, which so far has eluded theoretical analysis. We first propose a general social contagion model with reinforcement derived from non-redundant information memory. Then, we develop a unified edge-based compartmental theory to analyze this model, and a remarkable agreement with numerics is obtained on some specific models. Using a spreading threshold model as a specific example to understand the memory effect, in which each individual adopts a social behavior only when the cumulative pieces of information that the individual received from his/her neighbors exceeds an adoption threshold. Through analysis and numerical simulations, we find that the memory characteristic markedly affects the dynamics as quantified by the final adoption size. Strikingly, we uncover a transition phenomenon in which the dependence of the final adoption size on some key parameters, such as the transmission probability, can change from being discontinuous to being continuous. The transition can be triggered by proper parameters and structural perturbations to the system, such as decreasing individuals' adoption threshold, increasing initial seed size, or enhancing the network heterogeneity.Comment: 13 pages, 9 figure

Electronic and transport properties of azobenzene monolayer junctions as molecular switches

We investigate from first-principles the change in transport properties of a two-dimensional azobenzene monolayer sandwiched between two Au electrodes that undergoes molecular switching. We focus on transport differences between a chemisorbed and physisorbed top monolayer-electrode contact. The conductance of the monolayer junction with a chemisorbed top contact is higher in trans configuration, in agreement with the previous theoretical predictions of one-dimensional single molecule junctions. However, with a physisorbed top contact, the "ON" state with larger conductance is associated with the cis configuration due to a reduced effective tunneling pathway by switching from trans to cis, which successfully explains recently experimental measurements of azobenzene monolayer junctions. A simple model is developed to explain electron transmission across subsystems in the molecular junction. We also discuss the effects of monolayer packing density, molecule tilt angle, and contact geometry on the calculated transmission functions. In particular, we find that a tip-like contact with chemisorption significantly affects the electric current through the cis monolayer, leading to highly asymmetric current-voltage characteristics as well as large negative differential resistance behavior.Comment: 10 pages, 11 figures, publishe

Self-Consistent Effective Hamiltonian Theory for Fermionic Many Body Systems

Using a separable many-body variational wavefunction, we formulate a self-consistent effective Hamiltonian theory for fermionic many-body system. The theory is applied to the two-dimensional Hubbard model as an example to demonstrate its capability and computational effectiveness. Most remarkably for the Hubbard model in 2-d, a highly unconventional quadruple-fermion non-Cooper-pair order parameter is discovered

Electronic resistances of multilayered two-dimensional crystal junctions

We carry out a layer-by-layer investigation to understand electron transport across metal-insulator-metal junctions. Interfacial structures of junctions were studied and characterized using first-principles density functional theory within the generalized gradient approximation. We found that as a function of the number of crystal layers the calculated transmission coefficients of multilayer silicene junctions decay much slower than for BN-based junctions We revisited the semiclassical Boltzmann theory of electronic transport and applied to multilayer silicene and BN-based junctions. The calculated resistance in the high-transmission regime is smaller than that provided by the Landauer formula. As the thickness of the barrier increases, results from the Boltzmann and the Landauer formulae converge. We provide a upper limit in the transmission coefficient below which, the Landauer method becomes valid. Quantitatively, when the transmission coefficient is lower than $\sim 0.05$ per channel, the error introduced by the Landauer formula for calculating the resistance is negligible. In addition, we found that the resistance of a junction is not entirely determined by the averaged transmission, but also by the distribution of the transmission over the first Brillouin zone.Comment: 11 pages, 7 figure

Tunneling Field-Effect Junctions with WS2_2 barrier

Transition metal dichalcogenides (TMDCs), with their two-dimensional structures and sizable bandgaps, are good candidates for barrier materials in tunneling field-effect transistor (TFET) formed from atomic precision vertical stacks of graphene and insulating crystals of a few atomic layers in thickness. We report first-principles study of the electronic properties of the Graphene/WS$_2$/Graphene sandwich structure revealing strong interface effects on dielectric properties and predicting a high ON/OFF ratio with an appropriate WS$_2$ thickness and a suitable range of the gate voltage. Both the band spin-orbit coupling splitting and the dielectric constant of the WS$_2$ layer depend on its thickness when in contact with the graphene electrodes, indicating strong influence from graphene across the interfaces. The dielectric constant is significantly reduced from the bulk WS$_2$ value. The effective barrier height varies with WS$_2$ thickness and can be tuned by a gate voltage. These results are critical for future nanoelectronic device designs.Comment: 18 pages, 5 figure