Renormalization-group improved predictions for Higgs boson production at large pTp_T

We study the next-to-next-to-leading logarithmic order resummation for the large $p_T$ Higgs boson production at the LHC in the framework of soft-collinear effective theory. We find that the resummation effects reduce the scale uncertainty significantly and decrease the QCD NLO results by about $11\%$ in the large $p_T$ region. The finite top quark mass effects and the effects of the NNLO singular terms are also discussed.Comment: 31 pages, 17 figures, version published in Phys.Rev.

Chaos-based wireless communication resisting multipath effects

This work is supported by NSFC (China) under Grants No. 61401354, No. 61172070, and No. 61502385; by the Innovative Research Team of Shaanxi Province under Grant No. 2013KCT-04; and by Key Basic Research Fund of Shaanxi Province under Grant No. 2016JQ6015.Peer reviewedPublisher PD

Poly[bis­(μ-azido-κ2 N 1:N 1)[μ-1,2-bis­(imid­azol-1-yl)ethane-κ2 N 3:N 3′]cadmium]

In the title three-dimensional coordination polymer, [Cd(N3)2(C8H10N4)]n, the coordination geometry around the CdII atom is distorted octa­hedral. The CdII atom is coordinated by two N atoms from two cis-positioned bridging 1,2-bis­(imidazol-1-yl)ethane (bime) ligands and four N atoms from four azide anions. Each azide ligand acts in an end-on bridging coordination mode. The azide ligands and CdII atoms form a one-dimensional zigzag chain constructed from four-membered [Cd(N3)2]n metallacycles extending along the a axis. These inorganic chains are connected with four other chains via bridging bime ligands to form a three-dimensional coordination network

Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate

Transition-metal dichalcogenide (TMD) semiconductors have been widely studied due to their distinctive electronic and optical properties. The property of TMD flakes is a function of its thickness, or layer number (N). How to determine N of ultrathin TMDs materials is of primary importance for fundamental study and practical applications. Raman mode intensity from substrates has been used to identify N of intrinsic and defective multilayer graphenes up to N=100. However, such analysis is not applicable for ultrathin TMD flakes due to the lack of a unified complex refractive index ($\tilde{n}$) from monolayer to bulk TMDs. Here, we discuss the N identification of TMD flakes on the SiO$_2$/Si substrate by the intensity ratio between the Si peak from 100-nm (or 89-nm) SiO$_2$/Si substrates underneath TMD flakes and that from bare SiO$_2$/Si substrates. We assume the real part of $\tilde{n}$ of TMD flakes as that of monolayer TMD and treat the imaginary part of $\tilde{n}$ as a fitting parameter to fit the experimental intensity ratio. An empirical $\tilde{n}$, namely, $\tilde{n}_{eff}$, of ultrathin MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes from monolayer to multilayer is obtained for typical laser excitations (2.54 eV, 2.34 eV, or 2.09 eV). The fitted $\tilde{n}_{eff}$ of MoS$_{2}$ has been used to identify N of MoS$_{2}$ flakes deposited on 302-nm SiO$_2$/Si substrate, which agrees well with that determined from their shear and layer-breathing modes. This technique by measuring Raman intensity from the substrate can be extended to identify N of ultrathin 2D flakes with N-dependent $\tilde{n}$ . For the application purpose, the intensity ratio excited by specific laser excitations has been provided for MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes and multilayer graphene flakes deposited on Si substrates covered by 80-110 nm or 280-310 nm SiO$_2$ layer.Comment: 10 pages, 4 figures. Accepted by Nanotechnolog