InAs Quantum Dots of Engineered Height for Fabrication of Broadband Superluminescent Diodes

Peer reviewed: YesNRC publication: Ye

Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs

Growth mechanisms of GaN microrods for 3D core-shell LEDs: The influence of silane flow

The three dimensional growth of GaN structures as a basis for the fabrication of 3D GaN core-shell LEDs has attracted substantial attention in the past years. GaN nanorods or microrods with high aspect ratios can be grown by selective area epitaxy on a GaN buffer through a SiOx mask. It has been found earlier that silane substantially initiates vertical growth, with the exact underlying mechanisms being still unclear. Here, the influence of silane on the 3D GaN column growth was investigated by performing detailed growth experiments in combination with a thorough surface analysis in order to get insight into these mechanisms. The vertical growth rate is significantly enhanced by high silane fluxes, whereas the saturation of growth rate with the time is reduced. Thus, homogenous GaN columns with an aspect ratio of more than 35 could be achieved. A thin Si-rich layer on the non-polar m-plane facets of the columns has been detected using a combination of transmission electron microscopy, energy dispersive X-ray spectroscopy and Auger electron spectroscopy. This layer is suggested to be the reason for the increase in growth rate, modifying the effective collection range of the species along the sidewalls, and preventing the lateral growth

Stable mode-locked pulses from mid-infrared semiconductor lasers

We report the unequivocal demonstration of mid-infrared mode-locked pulses from a semiconductor laser. The train of short pulses was generated by actively modulating the current and hence the optical gain in a small section of an edge-emitting quantum cascade laser (QCL). Pulses with pulse duration at full-width-at-half-maximum of about 3 ps and energy of 0.5 pJ were characterized using a second-order interferometric autocorrelation technique based on a nonlinear quantum well infrared photodetector. The mode-locking dynamics in the QCLs was modelled and simulated based on Maxwell-Bloch equations in an open two-level system. We anticipate our results to be a significant step toward a compact, electrically-pumped source generating ultrashort light pulses in the mid-infrared and terahertz spectral ranges.Comment: 26 pages, 4 figure