Smell and taste disorders

Smell and taste disorders can markedly affect the quality of life. In recent years we have become much better in the assessment of the ability to smell and taste. In addition, information is now available to say something about the prognosis of individual patients. With regard to therapy there also seems to be low but steady progress. Of special importance for the treatment is the ability of the olfactory epithelium to regenerate

Einrichtung zur Erfassung der Relativposition zweier zueinander bewegbarer Koerper

WO2003016817 A UPAB: 20030328 NOVELTY - Devices (3,4) generate a bundle of rays (L) extending along a connecting element (1) and move in common with the connecting element. A detector has a radiosensitive surface (5) located in the beam path of the bundle of rays. An evaluatory unit determines the coordinates (x,y) of an area (B) irradiated on the radiosensitive surface. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a device for applying the present invention to position two bodies moving in relation to each other. USE - For positioning tools or equipment on a platform/Stewart platform with telescopic legs. ADVANTAGE - Generating and detecting a second bundle of rays detects four degrees of freedom for an appropriate connecting element i.e. three degrees of rotatory freedom for its ball-and-socket joint and one degree of translatory freedom in the case of a connecting element with variable length

Epitaxial GaAs for X-ray imaging

11th International Workshop on Radiation Imaging Detectors, Czech Technical Univ, Inst Experimental & Applied Phys, Prague, CZECH REPUBLIC, JUN 29-JUL 03, 2009International audienceTo be used for X-ray imaging, semiconductor materials must exhibit good and uniform electronic properties. Epitaxial layers are therefore better adapted than bulk materials which contain dislocations, precipitates and point defects in variable concentrations depending on the growth mode and the nature of the material. However, they have to be thick enough to absorb photons efficiently. We produced thick epitaxial layers using a proprietary technique and made p/i/n (200-300 mu m thick) diodes with this new material. These diodes are characterized by a large reverse current, which can originate from electron emission from deep level defects present in the depleted region or be a leakage current. In order to answer this question, we performed a characterization of the defects present in the material. Here, we describe results obtained from X-ray diffraction, X-ray topography, time resolved photoluminescence and resistivity measurements. We also investigated the possible effect of hydrogen. From these observations, we deduced that defects exhibiting an electrical role are in negligible concentration and concluded that the high reverse current observed is a leakage current. (C) 2010 Elsevier B.V. All rights reserved