Universal lineshape of the Kondo zero-bias anomaly in a quantum dot

Encouraged by the recent real-time renormalization group results we carried out a detailed analysis of the nonequilibrium Kondo conductance observed in an InAs nanowire-based quantum dot and found them to be in excellent agreement. We show that in a wide range of bias the Kondo conductance zero-bias anomaly is scaled by the Kondo temperature to a universal lineshape predicted by the numerical study. The lineshape can be approximated by a phenomenological expression of a single argument $eV_{sd}=k_{\rm B}T_{\rm K}$. The knowledge of an analytical expression for the lineshape provides an alternative way for estimation of the Kondo temperature in a real experiment, with no need for time consuming temperature dependence measurements of the linear conductance.Comment: 5 pages, 3 figure

Phase Evolution in a Kondo Correlated System

The coherence and phase evolution of electrons in a mesoscopic system in the Kondo correlated regime were studied. The Kondo effect, in turn, is one of the most fundamental many-body effects where a localized spin interacts with conduction electrons in a conductor. Results were obtained by embedding a quantum dot (QD) in a double path electronic interferometer and measuring interference of electron waves. The Phase was found to evolve in a range twice as large as the theoretically predicted one. Moreover, the phase proved to be highly sensitive to the onset of Kondo correlation, thus serving as a new fingerprint of the Kondo effect.Comment: 4 pages, 4 figures. typos corrected. Changed to APS PRL styl

Fabrication of Nano-Scale Gaps in Integrated Circuits

Nano-size objects like metal clusters present an ideal system for the study of quantum phenomena and for constructing practical quantum devices. Integrating these small objects in a macroscopic circuit is, however, a difficult task. So far the nanoparticles have been contacted and addressed by highly sophisticated techniques which are not suitable for large scale integration in macroscopic circuits. We present an optical lithography method that allows for the fabrication of a network of electrodes which are separated by gaps of controlled nanometer size. The main idea is to control the gap size with subnanometer precision using a structure grown by molecular beam epitaxy.Comment: 4 pages, 3 figure