Synthesis and Optical Properties of Sprayed ZnO and ZnO:Ga Thin Films

Characteristics and optical constants of pure and Ga-doped ZnO thin films have been studied. Pure and Ga-doped zinc oxide thin films were deposited onto glass substrates using the spray pyrolysis technique. Optical absorption studies in the wavelength range of 300–900 nm showed a peak near 450 nm for different doped films (in addition to the peak for un-doped ZnO). Increasing the doping concentration of Ga to 7% induced an increase in the optical constants of films. This increase is attributed to the formation of chargetransfer complexes. ZnO thin films doped with Ga have improved the optical transmittance in the visible region. The addition of Ga also induced an obvious increase in the optical band gap of these films; the optical band gap of Ga-doped films was slightly higher than that of undoped samples (3.1 eV). This study also found that the highest band gap (Eg=3.4 eV) occurred for the film deposited with a doping concentration of 5% gallium

Optical Characterization of Silver Doped Poly (Vinyl Alcohol) Films

Silver-doped PVA films were prepared by casting method in order to study the effect of silver on the optical properties of poly(vinyl alcohol) using UV/VIS spectroscopy. It was found that these thin films have an indirect optical band gap (2.4-1.3) eV as the doping percentage increase. Extinction coefficient and refractive index increase as the doping percentage increase, while in general the optical dispersion parameters show an opposite behavior with dopin

Effects of Annealing on the Electronic Transitions of ZnS Thin Films

Thin films of zinc sulphide were prepared using a flash evaporation technique. The obtained thin films were subjected to heat treatment to investigate the effect of annealing on the transmittance spectrum and the electronic transitions. It has been found that annealing affected the transmission spectrum and caused an increase in the direct optical band gap. The optical parameters, oscillator energy E0 and dispersion energy Ed were determined using the Wemple DiDomenico single oscillator model. The optical energy gap obtained from the Wemple and DiDomenico model was in good agreement with the optical energy gap proposed by the Tauc theory

Effect of Molarity on the structural and optical properties of ZnO thin films deposit by CSP

ABSTRACT ZnO thin films have been prepared by chemical spray pyrolysis technique CSP). XRD pattern reveals that the preferred orientation was varied with concentration, topography analysis was done by AFM micrograph which confirm the existence of nonstructural films. The optical properties was done by recorded the transmittane and absorbance which were affected by an increase in concentration. The values of optical energy gap obtained from Tauc relation were 3.17, 3.18 and 3.19 eV for 0.05, 0.1 and 0.5 M respectively. Urbach energy confirms the decrease in band tail as the concentration increase

Morphological, Structural and Chemical Properties of p- type Porous Silicon Produced by Electrochemical Etching

In this paper, the nanocrystalline porous silicon (PS) films are prepared by electrochemical etching of p-type silicon wafer with current density (7 mA/cm2) and etching times on the formation nano-sized pore array with a dimension of around different etching time. The films were characterized by the measurement of XRD, FTIR spectroscopy and atomic force microscopy properties (AFM). We have estimated crystallites size from X-Ray diffraction about nanoscale for porous silicon and Atomic Force microscopy confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a-Si clusters (Si3–Si–H) dispersed in amorphous silica matrix . From the FTIR analyses showed that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increase

Structural and Optical Properties of Cobalt-Doped Zinc Oxide Thin Films Prepared By Spray Pyrolysis Technique

Undoped and Co-doped zinc oxide (CZO) thin films have been prepared by spray pyrolysis technique using solution of zinc acetate and cobalt chloride. The effect of Co dopants on structural and optical properties has been investigated. The films were found to exhibit maximum transmittance (~90%) and low absorbance. The structural properties of the deposited films were examined by x-ray diffraction (XRD). These films, deposited on glass substrates at (400? C), have a polycrystalline texture with a wurtzite hexagonal structure, and the grain size was decreased with increasing Co concentration, and no change was observed in lattice constants while the optical band gap decreased from (3.18-3.02) eV for direct allowed transition. Other parameters such as Texture Coefficient (Tc), dislocation density (?) and number of crystals (M) were also calculated