Generalized approach to the description of recombination kinetics in bulk heterojunction solar cells-extending from fully organic to hybrid solar cells

Lately, research efforts in photovoltaics towards hybrid solar cells based on nanostructured metal oxides and conjugated polymers have been intensifying. However, very limited effort has been spent so far to investigate their recombination kinetics in comparison with their fully organic counterpart. In this work, impedance spectroscopy under different illumination intensities is used to probe the recombination kinetics of hybrid solar cells based on ZnO nanorod arrays and poly(3-hexylthiophene). A recombination-based model developed for fully organic solar cells is effectively applied in our hybrid solar cells, demonstrating their similarity in device physics and establishing the nanorod array/polymer compound as true bulk heterojunction. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714902

A universal deposition protocol for planar heterojunction solar cells with high efficiency based on hybrid lead halide perovskite families

A robust and expedient gas quenching method is developed for the solution deposition of hybrid perovskite thin films. The method offers a reliable standard practice for the fabrication of a non-exhaustive variety of perovskites exhibiting excellent film morphology and commensurate high performance in both regular and inverted structured solar cell architectures

Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation

To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved