32 research outputs found
Développements récents de l'étude du EL2 dans GaAs
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On the atomic configuration of EL2
The atomic configuration of the EL2 defect in its stable state has been determined as an arsenic antisite defect associated with an arsenic interstitial at a next nearest neighbour site. The metastable EL2 state is tentatively assigned to an arsenic pair defect at a gallium lattice site (As-As ) Ga.La configuration atomique du défaut EL2 dans son état stable est attribuée à un complexe composé d'un antisite d'arsenique et d'un interstitiel d'arsenique en position de deuxième voisin. Les propriétés de l'état métastable peuvent être décrites dans un modèle d'une paire d'arsenique (As-As )Ga à un site gallium
Recent developments in the study of the EL2 defect in GaAs
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Développements récents de l'étude du EL2 dans GaAs
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Electron paramagnetic resonance study of Zn1–xCoxO: A predicted high-temperature ferromagnetic semiconductor.
International audienceThe magnetic properties of Co2+ ions in epitaxial (Zn,Co)O layers with 10% Co concentration have been studied by electron paramagnetic resonance spectroscopy. The Co-related EPR spectrum is characterized by a 200-G broad anisotropic single line with g factors close to those of the isolated Co2+ ion. The temperature dependence of the EPR signal follows a Curie-Weiss law with a critical temperature of +12 K. We find no evidence for a high-temperature ferromagnetic state. Magnetocrystalline anisotropy is observed and a canted spin arrangement is suggested