Renormalization Group Study of Magnetic Catalysis in the 3d Gross-Neveu Model

Magnetic catalysis describes the enhancement of symmetry breaking quantum fluctuations in chirally symmetric quantum field theories by the coupling of fermionic degrees of freedom to a magnetic background configuration. We use the functional renormalization group to investigate this phenomenon for interacting Dirac fermions propagating in (2+1)-dimensional spacetime, described by the Gross-Neveu model. We identify pointlike operators up to quartic fermionic terms that can be generated in the renormalization group flow by the presence of an external magnetic field. We employ the beta function for the fermionic coupling to quantitatively analyze the field dependence of the induced spectral gap. Within our pointlike truncation, the renormalization group flow provides a simple picture for magnetic catalysis.Comment: 14 pages, 6 figures, typos correcte

Quantum dot photonic crystal lasers

Coupled cavity designs on two-dimensional square lattice photonic crystal slabs were used to demonstrate optically pumped indium arsenide quantum dot photonic crystal lasers at room temperature. Threshold pump powers of 120 and 370 μW were observed for coupled cavities including two and four defect cavities defined in optimised photonic crystals

Fabrication of small laterally patterned multiple quantum wells

A technique of high voltage electron beam lithography and BCI_3/Ar reactive ion etching for laterally patterning GaAs/Al_0_3 Ga_(0.7) As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated

Functional renormalization and mean-field approach to multiband systems with spin-orbit coupling: Application to the Rashba model with attractive interaction

The functional renormalization group (RG) in combination with Fermi surface patching is a well-established method for studying Fermi liquid instabilities of correlated electron systems. In this article, we further develop this method and combine it with mean-field theory to approach multiband systems with spin-orbit coupling, and we apply this to a tight-binding Rashba model with an attractive, local interaction. The spin dependence of the interaction vertex is fully implemented in a RG flow without SU(2) symmetry, and its momentum dependence is approximated in a refined projection scheme. In particular, we discuss the necessity of including in the RG flow contributions from both bands of the model, even if they are not intersected by the Fermi level. As the leading instability of the Rashba model, we find a superconducting phase with a singlet-type interaction between electrons with opposite momenta. While the gap function has a singlet spin structure, the order parameter indicates an unconventional superconducting phase, with the ratio between singlet and triplet amplitudes being plus or minus one on the Fermi lines of the upper or lower band, respectively. We expect our combined functional RG and mean-field approach to be useful for an unbiased theoretical description of the low-temperature properties of spin-based materials.Comment: consistent with published version in Physical Review B (2016

Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage

We have laterally patterned the narrowest conducting wires of two-dimensional electron gas (2DEG) material reported to date. The depletion induced by low-energy ion etching of GaAs-AlGaAs 2DEG structures was used to define narrow conducting channels. We employed high voltage electron beam lithography to create a range of channel geometries with widths as small as 75 nm. Using ion beam assisted etching by Cl2 gas and Ar ions with energies as low as 150 eV, conducting channels were defined by etching only through the thin GaAs cap layer. This slight etching is sufficient to entirely deplete the underlying material without necessitating exposure of the sidewalls that results in long lateral depletion lengths. At 4.2 K, without illumination, our narrowest wires retain a carrier density and mobility at least as high as that of the bulk 2DEG and exhibit quantized Hall effects. Aharonov–Bohm oscillations are seen in rings defined by this controlled etch-damage patterning. This patterning technique holds promise for creating one-dimensional conducting wires of even smaller sizes

Gauge symmetric delta(1232) couplings and the radiative muon capture in hydrogen

Using the difference between the gauge symmetric and standard pi-N-delta couplings, a contact pi-pi-N-N term, quadratic in the pi-N-delta coupling, is explicitly constructed. Besides, a contribution from the delta excitation mechanism to the photon spectrum for the radiative muon capture in hydrogen is derived from the gauge symmetric pi-N-delta and gamma-N-delta couplings. It is shown for the photon spectrum, studied recently experimentally, that the new spectrum is for the photon momentums k > 60 MeV by 4-10 % smaller than the one obtained from standardly used couplings with the on-shell deltas.Comment: 9 pages, 3 figure

Non-Volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl Films on GaAs

Hall-effect structures with submicrometre linewidths (<0.3pm) have been fabricated in ferromagnetic thin films of Mn[sub 0.60]Al[sub 0.40] which are epitaxially grown on a GaAs substrate. The MnAl thin films exhibit a perpendicular remanent magnetisation and an extraordinary Hall effect with square hysteretic behaviour. The presence of two distinct stable readout states demonstrates the potential of using ultrasmall ferromagnetic volumes for electrically addressable, nonvolatile storage of digital information

Scanning a photonic crystal slab nanocavity by condensation of xenon

Allowing xenon or nitrogen gas to condense onto a photonic crystal slab nanocavity maintained at 10–20 K results in shifts of the nanocavity mode wavelength by as much as 5 nm (~=4 meV). This occurs in spite of the fact that the mode defect is achieved by omitting three holes to form the spacer. This technique should be useful in changing the detuning between a single quantum dot transition and the nanocavity mode for cavity quantum electrodynamics experiments, such as mapping out a strong coupling anticrossing curve. Compared with temperature scanning, it has a much larger scan range and avoids phonon broadening

Improvement by laser quenching of an "atom diode": a one-way barrier for ultra-cold atoms

Different laser devices working as ``atom diodes'' or ``one-way barriers'' for ultra-cold atoms have been proposed recently. They transmit ground state level atoms coming from one side, say from the left, but reflect them when they come from the other side. We combine a previous model, consisting of the stimulated Raman adiabatic passage (STIRAP) from the ground to an excited state and a state-selective mirror potential, with a localized quenching laser which produces spontaneous decay back to the ground state. This avoids backwards motion, provides more control of the decay process and therefore a more compact and useful device.Comment: 6 page