8,236 research outputs found

    MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

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    The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200 degree C and then decreased rapidly at Ta over 250 degree C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture result-ing from diffusion of B into Pd layers. MTJs which were in-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayer showed TMR ratio of 78% by post annealing at Ta =200 degree C.Comment: 12 pages, 4 figure

    Structural Transition of Li2RuO3 Induced by Molecular-Orbit Formation

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    A pseudo honeycomb system Li2RuO3 exhibits a second-order-like transition at temperature T=Tc=540 K to a low-T nonmagnetic phase with a significant lattice distortion forming Ru-Ru pairs. For this system, we have calculated the band structure, using the generalized gradient approximation (GGA) in both the high- and low- T phases, and found that the results of the calculation can naturally explain the insulating behavior observed in the low-T phase. The detailed characters of the Ru 4d t2g bands obtained by the tight-binding fit to the calculated dispersion curves show clear evidence that the structural transition is driven by the formation of the Ru-Ru molecular-orbits, as proposed in our previous experimental studies.Comment: 5 pages, 5 figures, 4 tables, submitted to J. Phys. Soc. Jp

    Ultrahigh-Field Hole Cyclotron Resonance Absorption in InMnAs Films

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    We have carried out an ultrahigh-field cyclotron resonance study of p-type In1-xMnxAs films, with Mn composition x ranging from 0% to 2.5%, grown on GaAs by low-temperature molecular-beam epitaxy. Pulsed magnetic fields up to 500 T were used to make cyclotron resonance observable in these low-mobility samples. The clear observation of hole cyclotron resonance is direct evidence of the existence of a large number of itinerant, effective-mass-type holes rather than localized d-like holes. It further suggests that the p-d exchange mechanism is more favorable than the double exchange mechanism in this narrow gap InAs-based dilute magnetic semiconductor. In addition to the fundamental heavy-hole and light-hole cyclotron resonance absorption appearing near the high-magnetic-field quantum limit, we observed many inter-Landau-level absorption bands whose transition probabilities are stronglydependent on the sense of circular polarization of the incident light.Comment: 8 pages, 10 Postscript figure

    Evolution of superconductivity in LaO1-xFxBiS2 prepared by high pressure technique

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    Novel BiS2-based superconductors LaO1-xFxBiS2 prepared by the high pressure synthesis technique were systematically studied. It was found that the high pressure annealing strongly the lattice as compared to the LaO1-xFxBiS2 samples prepared by conventional solid state reaction at ambient pressure. Bulk superconductivity was observed within a wide F-concentration range of x = 0.2 ~ 0.7. On the basis of those results, we have established a phase diagram of LaO1-xFxBiS2.Comment: 11 pages, 6 figure

    Dynamic and post-dynamic recrystallization under hot, cold and severe plastic deformation conditions

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    The evolution of the new microstructures produced by two types of dynamic recrystallization is reviewed, including those brought about by severe plastic deformation (SPD). The microstructural changes taking place under these conditions and the associated mechanical behaviors are describe

    Ultrahigh field electron cyclotron resonance absorption in In1x_{1-x}Mnx_xAs films

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    We have carried out an ultrahigh field cyclotron resonance study of nn-type In1x_{1-x}Mnx_xAs films, with Mn composition xx ranging from 0 to 12%, grown on GaAs by low temperature molecular beam epitaxy. We observe that the electron cyclotron resonance peak shifts to lower field with increasing xx. A detailed comparison of experimental results with calculations based on a modified Pidgeon-Brown model allows us to estimate the {\em s-d} and {\em p-d} exchange coupling constants, α\alpha and β\beta, for this important III-V dilute magnetic semiconductor system.Comment: 4 pages, 4 figure
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