Temperature dependent photoluminescence of single CdS nanowires

Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near-band edge (NBE) photoluminescence (PL) and spatially-localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is raised, the defect states rapidly quench at varying rates leaving the NBE PL which dominates up to room temperature. All PL lines from nanowires follow closely the temperature-dependent band edge, similar to that observed in bulk CdS.Comment: 11 pages, 4 figure

Low temperature photoluminescence imaging and time-resolved spectroscopy of single CdS nanowires

Time-resolved photoluminescence (PL) and micro-PL imaging were used to study single CdS nanowires at 10 K. The low-temperature PL of all CdS nanowires exhibit spectral features near energies associated with free and bound exciton transitions, with the transition energies and emission intensities varying along the length of the nanowire. In addition, several nanowires show spatially localized PL at lower energies which are associated with morphological irregularities in the nanowires. Time-resolved PL measurements indicate that exciton recombination in all CdS nanowires is dominated by non-radiative recombination at the surface of the nanowires.Comment: 9 pages, 3 figures, to be published in Applied Physics Letter

Dengue epidemic in southern Vietnam, 1998.

A widespread epidemic of dengue hemorrhagic fever (DHF) occurred in southern Vietnam in 1998, with 438.98 cases/100,000 population and 342 deaths. The number of DHF cases and deaths per 100,000 population increased 152.4% and 151.8%, respectively, over a 1997 epidemic. Dengue viruses were isolated from 143 patient blood samples; DEN-3 virus was identified as the predominant serotype, although a resurgence of DEN-4 was noted