USp(2k) Matrix Model: F Theory Connection

We present a zero dimensional matrix model based on $USp(2k)$ with supermultiplets in symmetric, antisymmetric and fundamental representations. The four dimensional compactification of this model naturally captures the exact results of Sen \cite{Sen} in $F$ theory. Eight dynamical and eight kinematical supercharges are found, which is required for critical string interpretation. Classical vacuum has ten coordinates and is equipped with orbifold structure. We clarify the issue of spacetime dimensions which $F$ theory represented by this matrix model produces.Comment: 11 pages, Latex: interpretation as large T^{6}/Z^{2} IIB orientifold added, the final version to appear in Progress of Theoretical Physic

Current-induced persistent magnetization in a relaxorlike manganite

A single crystal of 7% Fe-doped (La$_{0.7}$Pr$_{0.3}$)$_{0.65}$Ca$_{0.35}$MnO$_3$ shows up as a typical relaxor ferromagnet, where ferromagnetic metallic and charge-orbital-ordered insulating clusters coexist with controllable volume fraction by external stimuli. There, the persistent ferromagnetic metallic state can be produced by an electric-current excitation as the filamentary region, the magnetization in which is increased by ~0.4$\mu_{\rm B}$ per Mn. A clear distinction from the current heating effect in a magnetic field, which conversely leads to a decrease in ferromagnetic fraction, enables us to bi-directionally switch both the magnetization and resistance by applying the voltages with different magnitudes.Comment: 4 pages, 3 figure

Dephasing in a quantum dot coupled to a quantum point contact

We investigate a dephasing mechanism in a quantum dot capacitively coupled to a quantum point contact. We use a model which was proposed to explain the 0.7 structure in point contacts, based on the presence of a quasi-bound state in a point contact. The dephasing rate is examined in terms of charge fluctuations of electrons in the bound state. We address a recent experiment by Avinun-Kalish {\it et al.} [Phys. Rev. Lett. {\bf 92}, 156801 (2004)], where a double peak structure appears in the suppressed conductance through the quantum dot. We show that the two conducting channels induced by the bound state are responsible for the peak structure.Comment: 4 pages, 2 figure

Magnetic digital flop of ferroelectric domain with fixed spin chirality in a triangular lattice helimagnet

Ferroelectric properties in magnetic fields of varying magnitude and direction have been investigated for a triangular-lattice helimagnet CuFe1-xGaxO2 (x=0.035). The magnetoelectric phase diagrams were deduced for magnetic fields along [001], [110], and [1-10] direction, and the in-plane magnetic field was found to induce the rearrangement of six possible multiferroic domains. Upon every 60-degree rotation of in-plane magnetic field around the c-axis, unique 120-degree flop of electric polarization occurs as a result of the switch of helical magnetic q-vector. The chirality of spin helix is always conserved upon the q-flop. The possible origin is discussed in the light of the stable structure of multiferroic domain wall.Comment: 5 pages, 4 figures. Accepted in Phys. Rev. Let

Field Effect Transistor Based on KTaO3 Perovskite

An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room temperature, both of which are much better than those of the SrTiO3 FETs reported previously. The field effect mobility was almost temperature independent down to 200K. Our results indicate that the Al2O3 / KTaO3 interface is worthy of further investigations as an alternative system of future oxide electronics.Comment: 3 pages, 3 Postscript figures, submitted to Appl.Phys.Let

Low temperature metallic state induced by electrostatic carrier doping of SrTiO3_3

Transport properties of SrTiO$_3$-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below $R_{\Box}$ $\sim$ 10 k$\Omega$ at low temperatures, with carrier mobility exceeding 1000 cm$^2$/Vs. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior ($dR$/$dT$ $>$ 0). Our results demonstrate an insulator to metal transition in SrTiO$_3$ driven by electrostatic carrier density control.Comment: 3 pages, 4 figure