Model Order Reduction for Rotating Electrical Machines

The simulation of electric rotating machines is both computationally expensive and memory intensive. To overcome these costs, model order reduction techniques can be applied. The focus of this contribution is especially on machines that contain non-symmetric components. These are usually introduced during the mass production process and are modeled by small perturbations in the geometry (e.g., eccentricity) or the material parameters. While model order reduction for symmetric machines is clear and does not need special treatment, the non-symmetric setting adds additional challenges. An adaptive strategy based on proper orthogonal decomposition is developed to overcome these difficulties. Equipped with an a posteriori error estimator the obtained solution is certified. Numerical examples are presented to demonstrate the effectiveness of the proposed method

Electric double-layer capacitance between an ionic liquid and few-layer graphene

Ionic-liquid gates have a high carrier density due to their atomically thin electric double layer (EDL) and extremely large geometrical capacitance C-g. However, a high carrier density in graphene has not been achieved even with ionic-liquid gates because the EDL capacitance C-EDL between the ionic liquid and graphene involves the series connection of C-g and the quantum capacitance C-q, which is proportional to the density of states. We investigated the variables that determine C-EDL at the molecular level by varying the number of graphene layers n and thereby optimising C-q. The C-EDL value is governed by C-q at n, 4, and by C-g at n > 4. This transition with n indicates a composite nature for C-EDL. Our finding clarifies a universal principle that determines capacitance on a microscopic scale, and provides nanotechnological perspectives on charge accumulation and energy storage using an ultimately thin capacitor

A model for the dynamics and internal structure of planar doping fronts in organic semiconductors

The dynamics and internal structure of doping fronts in organic semiconductors are investigated theoretically using an extended drift-diffusion model for ions, electrons and holes. The model also involves the injection barriers for electrons and holes in the partially doped regions in the form of the Nernst equation, together with a strong dependence of the electron and hole mobility on concentrations. Closed expressions for the front velocities and the ion concentrations in the doped regions are obtained. The analytical theory is employed to describe the acceleration of the p- and n-fronts towards each other. The analytical results show very good agreement with the experimental data. Furthermore, it is shown that the internal structure of the doping fronts is determined by the diffusion and mobility processes. The asymptotic behavior of the concentrations and the electric field is studied analytically inside the doping fronts. The numerical solution for the front structure confirms the most important predictions of the analytical theory: a sharp head of the front in the undoped region, a smooth relaxation tail in the doped region, and a plateau at the critical point of transition from doped to undoped regions.Comment: 13 pages, 11 figure

Liquid-gated interface superconductivity on an atomically flat film

Liquid/solid interfaces are attracting growing interest not only for applications in catalytic activities and energy storage(1,2), but also for their new electronic functions in electric double-layer transistors (EDLTs) exemplified by high-performance organic electronics(3-7), field-induced electronic phase transitions(8-11), as well as superconductivity in SrTiO(3) (ref. 12). Broadening EDLTs to induce superconductivity within other materials is highly demanded for enriching the materials science of superconductors. However, it is severely hampered by inadequate choice of materials and processing techniques(13). Here we introduce an easy method using ionic liquids as gate dielectrics, mechanical micro-cleavage techniques for surface preparation, and report the observation of field-induced superconductivity showing a transition temperature T(c) = 15.2 K on an atomically flat film of layered nitride compound, ZrNCl. The present result reveals that the EDLT is an extremely versatile tool to induce electronic phase transitions by electrostatic charge accumulation and provides new routes in the search for superconductors beyond those synthesized by traditional chemical methods

Gate induced superconductivity in layered material based electronic double layer field effect transistors

Applying the principle of field effect transistor to layered materials provides new opportunities to manipulate their electronic properties for interesting sciences and applications. Novel gate dielectrics like electronic double layer (EDL) formed by ionic liquids are demonstrated to achieve an electrostatic surface charge accumulation on the order of 10(14) cm(-2). To realize electric field-induced superconductivity, we chose a layered compound: ZrNCl, which is known to be superconducting by introducing electrons through intercalation of alkali metals into the van der Waals gaps. A ZrNCl-based EDL transistor was micro fabricated on a thin ZrNCl single crystal made by mechanical micro-cleavage. Accumulating charges using EDL gate dielectrics onto the channel surface of ZrNCl shows effective field effect modulation of its electronic properties. Sheet resistance of ZrNCl EDL transistor is reduced by applying a gate voltage from 0 to 4.5 V. Temperature dependence of sheet resistance showed clear evidence of metal-insulator transition upon gating, observed at a gate voltage higher than 3.5 V. Furthermore, gate-induced superconductivity took place after metal-insulator transition when the transistor is cooled down to about 15 K. (C) 2009 Elsevier B.V. All rights reserved