Disorder and Electronic Transport in Graphene

In this review, we provide an account of the recent progress in understanding electronic transport in disordered graphene systems. Starting from a theoretical description that emphasizes the role played by band structure properties and lattice symmetries, we describe the nature of disorder in these systems and its relation to transport properties. While the focus is primarily on theoretical and conceptual aspects, connections to experiments are also included. Issues such as short versus long-range disorder, localization (strong and weak), the carrier density dependence of the conductivity, and conductance fluctuations are considered and some open problems are pointed out.Comment: 18 pages, 5 figures, Topical Revie

The recursive Green's function method for graphene

We describe how to apply the recursive Green's function method to the computation of electronic transport properties of graphene sheets and nanoribbons in the linear response regime. This method allows for an amenable inclusion of several disorder mechanisms at the microscopic level, as well as inhomogeneous gating, finite temperature, and, to some extend, dephasing. We present algorithms for computing the conductance, density of states, and current densities for armchair and zigzag atomic edge alignments. Several numerical results are presented to illustrate the usefulness of the method.Comment: 26 pages, 15 figures; submitted to Journal of Computational Electronics (special issue on graphene

Multi-scale approach for strain-engineering of phosphorene

A multi-scale approach for the theoretical description of deformed phosphorene is presented. This approach combines a valence-force model to relate macroscopic strain to microscopic displacements of atoms and a tight-binding model with distance-dependent hopping parameters to obtain electronic properties. The resulting self-consistent electromechanical model is suitable for large-scale modeling of phosphorene devices. We demonstrate this for the case of an inhomogeneously deformed phosphorene drum, which may be used as an exciton funnel

Conductance quantization and transport gap in disordered graphene nanoribbons

We study numerically the effects of edge and bulk disorder on the conductance of graphene nanoribbons. We compute the conductance suppression due to localization induced by edge scattering. We find that even for weak edge roughness, conductance steps are suppressed and transport gaps appear. These gaps are approximately inversely proportional to the nanoribbon width. On/off conductance ratios grow exponentially with the nanoribbon length. Our results impose severe limitations to the use of graphene in ballistic nanowires.Comment: 5 pages, 7 figures; references added, typos fixed, to appear in Phys. Rev