K-band dielectric resonator oscillator using a GaInP/GaAs HBT

Design, fabrication and performance of the first hybrid dielectric resonator oscillator (DRO) using a GaInP/GaAs HBT as active device are described. The oscillator consists of a microstrip circuit realized on aluminia substrate. The HBT has an emitter area of 1.5 mym x 20 mym and a selfaligned base contact. The vertical layer structure of the HBT incorporates a highly carbon doped base and a thin GaInP blocking layer. The fabricated oscillator exhibits an output power of plus 5 dBm at 21 GHz with a conversion efficiency of 13 percent. The phase noise has been measured to be minus 102.5 dBc/Hz at 100 kHz and minus 81.6 dBc/Hz at 10 kHz off carrier, respectively