Numerical Analysis of Inlet Gas-Mixture Flow Rate Effects on Carbon Nanotube Growth Rate

The growth rate and uniformity of Carbon Nano Tubes (CNTs) based on Chemical Vapor Deposition (CVD) technique is investigated by using a numerical model. In this reactor, inlet gas mixture, including xylene as carbon source and mixture of argon and hydrogen as  carrier gas enters into a horizontal CVD reactor at atmospheric pressure. Based on the gas phase and surface reactions, released carbon atoms are grown as CNTs on the iron catalysts at the reactor hot walls. The effect of inlet gas-mixture flow rate, on CNTs growth rate and its uniformity is discussed. In addition the velocity and temperature profile and also species concentrations throughout the reactor are presented

Numerical Study of Operating Pressure Effect on Carbon Nanotube Growth Rate and Length Uniformity

Chemical Vapor Deposition (CVD) is one of the most popular methods for producing Carbon Nanotubes (CNTs). The growth rate of CNTs based on CVD technique is investigated by using a numerical model based on finite volume method. Inlet gas mixture, including xylene as carbon source and mixture of argon and hydrogen as carrier gas enters into a horizontal CVD reactor at atmospheric pressure. In this article the operating pressure variations are studied as the effective parameter on CNT growth rate and length uniformity