Field Effect Transistor Based on KTaO3 Perovskite

An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room temperature, both of which are much better than those of the SrTiO3 FETs reported previously. The field effect mobility was almost temperature independent down to 200K. Our results indicate that the Al2O3 / KTaO3 interface is worthy of further investigations as an alternative system of future oxide electronics.Comment: 3 pages, 3 Postscript figures, submitted to Appl.Phys.Let

Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV

Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3_{3}/SrTi0.99_{0.99}Nb0.01_{0.01}O3_{3}

Transport properties have been studied for a perovskite heterojunction consisting of SrRuO$_{3}$ (SRO) film epitaxially grown on SrTi$_{0.99}$Nb$_{0.01}$O$_{3}$ (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage ($I$-$V$) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an $n$-type semiconductor (Nb:STO). A hysteresis appears in the $I$-$V$ characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 $\mu$s - 10 ms duration.Comment: 3 pages, 3 figures, Appl. Phys. Lett., in pres

Comparison of s- and d-wave gap symmetry in nonequilibrium superconductivity

Recent application of ultrafast pump/probe optical techniques to superconductors has renewed interest in nonequilibrium superconductivity and the predictions that would be available for novel superconductors, such as the high-Tc cuprates. We have reexamined two of the classical models which have been used in the past to interpret nonequilibrium experiments with some success: the mu* model of Owen and Scalapino and the T* model of Parker. Predictions depend on pairing symmetry. For instance, the gap suppression due to excess quasiparticle density n in the mu* model, varies as n^{3/2} in d-wave as opposed to n for s-wave. Finally, we consider these models in the context of S-I-N tunneling and optical excitation experiments. While we confirm that recent pump/probe experiments in YBCO, as presently interpreted, are in conflict with d-wave pairing, we refute the further claim that they agree with s-wave.Comment: 14 pages, 11 figure

Species specific differences in use of ANP32 proteins by influenza A virus

Influenza A viruses (IAV) are subject to species barriers that prevent frequent zoonotic transmission and pandemics. One of these barriers is the poor activity of avian IAV polymerases in human cells. Differences between avian and mammalian ANP32 proteins underlie this host range barrier. Human ANP32A and ANP32B homologues both support function of human-adapted influenza polymerase but do not support efficient activity of avian IAV polymerase which requires avian ANP32A. We show here that the gene currently designated as avian ANP32B is evolutionarily distinct from mammalian ANP32B, and that chicken ANP32B does not support IAV polymerase activity even of human-adapted viruses. Consequently, IAV relies solely on chicken ANP32A to support its replication in chicken cells. Amino acids 129I and 130N, accounted for the inactivity of chicken ANP32B. Transfer of these residues to chicken ANP32A abolished support of IAV polymerase. Understanding ANP32 function will help develop antiviral strategies and aid the design of influenza virus resilient genome edited chickens

Soliton tunneling with sub-barrier kinetic energies

We investigate (theoretically and numerically) the dynamics of a soliton moving in an asymmetrical potential well with a finite barrier. For large values of the width of the well, the width of the barrier and/or the height of the barrier, the soliton behaves classically. On the other hand, we obtain the conditions for the existence of soliton tunneling with sub-barrier kinetic energies. We apply these results to the study of soliton propagation in disordered systems.Comment: 6 eps figures. To appear in Physical Review E (Rapid Communications

Magnetism of small V clusters embedded in a Cu fcc matrix: an ab initio study

We present extensive first principles density functional theory (DFT) calculations dedicated to analyze the magnetic and electronic properties of small V$_{n}$ clusters (n=1,2,3,4,5,6) embedded in a Cu fcc matrix. We consider different cluster structures such as: i) a single V impurity, ii) several V$_{2}$ dimers having different interatomic distance and varying local atomic environment, iii) V$_{3}$ and iv) V$_{4}$ clusters for which we assume compact as well as 2- and 1-dimensional atomic configurations and finally, in the case of the v) V$_{5}$ and vi) V$_{6}$ structures we consider a square pyramid and a square bipyramid together with linear arrays, respectively. In all cases, the V atoms are embedded as substitutional impurities in the Cu network. In general, and as in the free standing case, we have found that the V clusters tend to form compact atomic arrays within the cooper matrix. Our calculated non spin-polarized density of states at the V sites shows a complex peaked structure around the Fermi level that strongly changes as a function of both the interatomic distance and local atomic environment, a result that anticipates a non trivial magnetic behavior. In fact, our DFT calculations reveal, in each one of our clusters systems, the existence of different magnetic solutions (ferromagnetic, ferrimagnetic, and antiferromagnetic) with very small energy differences among them, a result that could lead to the existence of complex finite-temperature magnetic properties. Finally, we compare our results with recent experimental measurements.Comment: 7 pages and 4 figure

All electron and pseudopotential study of the spin polarization of the V (001) surface: LDA versus GGA

The spin-polarization at the V(001) surface has been studied by using different local (LSDA) and semilocal (GGA) approximations to the exchange-correlation potential of DFT within two ab initio methods: the all-electron TB-LMTO-ASA and the pseudopotential LCAO code SIESTA (Spanish Initiative for Electronic Simulations with Thousands of Atoms). A comparative analysis is performed first for the bulk and then for a N-layer V(001) film (7 < N < 15). The LSDA approximation leads to a non magnetic V(001) surface with both theoretical models in agreement (disagreement) with magneto-optical Kerr (electron-capture spectroscopy) experiments. The GGA within the pseudopotential method needs thicker slabs than the LSDA to yield zero moment at the central layer, giving a high surface magnetization (1.70 Bohr magnetons), in contrast with the non magnetic solution obtained by means of the all-electron code.Comment: 12 pages, 1 figure. Latex gzipped tar fil