78 research outputs found
A Magnetic Resonance Force Microscopy Quantum Computer with Tellurium Donors in Silicon
We propose a magnetic resonance force microscopy (MRFM)-based nuclear spin
quantum computer using tellurium impurities in silicon. This approach to
quantum computing combines the well-developed silicon technology with expected
advances in MRFM.Comment: 9 pages, 1 figur
Insulator-to-metal transition in sulfur-doped silicon
We observe an insulator-to-metal (I-M) transition in crystalline silicon
doped with sulfur to non- equilibrium concentrations using ion implantation
followed by pulsed laser melting and rapid resolidification. This I-M
transition is due to a dopant known to produce only deep levels at equilibrium
concentrations. Temperature-dependent conductivity and Hall effect measurements
for temperatures T > 1.7 K both indicate that a transition from insulating to
metallic conduction occurs at a sulfur concentration between 1.8 and 4.3 x
10^20 cm-3. Conduction in insulating samples is consistent with variable range
hopping with a Coulomb gap. The capacity for deep states to effect metallic
conduction by delocalization is the only known route to bulk intermediate band
photovoltaics in silicon.Comment: Submission formatting; 4 journal pages equivalen
Single Spin Measurement using Single Electron Transistors to Probe Two Electron Systems
We present a method for measuring single spins embedded in a solid by probing
two electron systems with a single electron transistor (SET). Restrictions
imposed by the Pauli Principle on allowed two electron states mean that the
spin state of such systems has a profound impact on the orbital states
(positions) of the electrons, a parameter which SET's are extremely well suited
to measure. We focus on a particular system capable of being fabricated with
current technology: a Te double donor in Si adjacent to a Si/SiO2 interface and
lying directly beneath the SET island electrode, and we outline a measurement
strategy capable of resolving single electron and nuclear spins in this system.
We discuss the limitations of the measurement imposed by spin scattering
arising from fluctuations emanating from the SET and from lattice phonons. We
conclude that measurement of single spins, a necessary requirement for several
proposed quantum computer architectures, is feasible in Si using this strategy.Comment: 22 Pages, 8 Figures; revised version contains updated references and
small textual changes. Submitted to Phys. Rev.
Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques
[[abstract]]The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES), extended x-ray absorption fine structure (EXAFS), valence-band photoemission spectroscopy (VB-PES) and first-principles calculation. S 2p XPS spectra reveal that the S-hyperdoped Si with the greatest (~87%) sub-band gap absorption contains the highest concentration of S2− (monosulfide) species. Annealing S-hyperdoped Si reduces the sub-band gap absorptance and the concentration of S2− species, but significantly increases the concentration of larger S clusters [polysulfides (Sn2−, n > 2)]. The Si K-edge XANES spectra show that S hyperdoping in Si increases (decreased) the occupied (unoccupied) electronic density of states at/above the conduction-band-minimum. VB-PES spectra evidently reveal that the S-dopants not only form an impurity band deep within the band gap, giving rise to the sub-band gap absorption, but also cause the insulator-to-metal transition in S-hyperdoped Si samples. Based on the experimental results and the calculations by density functional theory, the chemical state of the S species and the formation of the S-dopant states in the band gap of Si are critical in determining the sub-band gap absorptance of hyperdoped Si samples.[[notice]]補正完畢[[journaltype]]國外[[incitationindex]]SCI[[ispeerreviewed]]Y[[booktype]]電子版[[countrycodes]]GB
SiGe: A Promise into Reality?
The paper summarizes a few basic properties of SiGe showing that SiGe is an interesting material for high speed electronics. The advantage of using heterostructures in silicon-based technologies is demonstrated by taking SiGe heterobipolar transistors as an example. First results obtained with very fast and low-noise heterobipolar transistors are briefly mentioned. The paper is concluded by a short discussion of a few optoelectronic properties observed in various Si/Ge and Si/SiGe strained-layer superlattices and quantum wells with particular emphasis on electroluminescence properties
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