Additional Evidence for the Surface Origin of the Peculiar Angular-Dependent Magnetoresistance Oscillations Discovered in a Topological Insulator Bi_{1-x}Sb_{x}

We present detailed data on the unusual angular-dependent magnetoresistance oscillation phenomenon recently discovered in a topological insulator Bi_{0.91}Sb_{0.09}. Direct comparison of the data taken before and after etching the sample surface gives compelling evidence that this phenomenon is essentially originating from a surface state. The symmetry of the oscillations suggests that it probably comes from the (111) plane, and obviously a new mechanism, such as a coupling between the surface and the bulk states, is responsible for this intriguing phenomenon in topological insulators.Comment: 5 pages, 4 figures, Proceedings manuscript for the 19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology (HMF-19

Origin of the large thermoelectric power in oxygen-variable RBaCo_{2}O_{5+x} (R=Gd, Nd)

Thermoelectric properties of GdBaCo_{2}O_{5+x} and NdBaCo_{2}O_{5+x} single crystals have been studied upon continuous doping of CoO_2 planes with either electrons or holes. The thermoelectric response and the resistivity behavior reveal a hopping character of the transport in both compounds, providing the basis for understanding the recently found remarkable divergence of the Seebeck coefficient at x=0.5. The doping dependence of the thermoelectric power evinces that the configurational entropy of charge carriers, enhanced by their spin and orbital degeneracy, plays a key role in the origin of the large thermoelectric response in these correlated oxides.Comment: 5 pages, 4 figures, accepted for publication in PR

Mobile Broadband Possibilities considering the Arrival of IEEE 802.16m & LTE with an Emphasis on South Asia

This paper intends to look deeper into finding an ideal mobile broadband solution. Special stress has been put in the South Asian region through some comparative analysis. Proving their competency in numerous aspects, WiMAX and LTE already have already made a strong position in telecommunication industry. Both WiMAX and LTE are 4G technologies designed to move data rather than voice having IP networks based on OFDM technology. So, they aren't like typical technological rivals as of GSM and CDMA. But still a gesture of hostility seems to outburst long before the stable commercial launch of LTE. In this paper various aspects of WiMAX and LTE for deployment have been analyzed. Again, we tried to make every possible consideration with respect to south Asia i.e. how mass people of this region may be benefited. As a result, it might be regarded as a good source in case of making major BWA deployment decisions in this region. Besides these, it also opens the path for further research and in depth thinking in this issue.Comment: IEEE Publication format, ISSN 1947 5500, http://sites.google.com/site/ijcsis

Room-temperature ferromagnetism in Sr_(1-x)Y_xCoO_(3-delta) (0.2 < x < 0.25)

We have measured magnetic susceptibility and resistivity of Sr$_{1-x}$Y$_x$CoO$_{3-\delta}$ ($x=$ 0.1, 0.15, 0.2, 0.215, 0.225, 0.25, 0.3, and 0.4), and have found that Sr$_{1-x}$Y$_x$CoO$_{3-\delta}$ is a room temperature ferromagnet with a Curie temperature of 335 K in a narrow compositional range of 0.2 $\leq x\leq$ 0.25. This is the highest transition temperature among perovskite Co oxides. The saturation magnetization for $x=$ 0.225 is 0.25 $\mu_B$/Co at 10 K, which implies that the observed ferromagnetism is a bulk effect. We attribute this ferromagnetism to a peculiar Sr/Y ordering.Comment: 5 pages, 4 figure

Improved Approximation Algorithms for Segment Minimization in Intensity Modulated Radiation Therapy

he segment minimization problem consists of finding the smallest set of integer matrices that sum to a given intensity matrix, such that each summand has only one non-zero value, and the non-zeroes in each row are consecutive. This has direct applications in intensity-modulated radiation therapy, an effective form of cancer treatment. We develop three approximation algorithms for matrices with arbitrarily many rows. Our first two algorithms improve the approximation factor from the previous best of $1+\log_2 h$ to (roughly) $3/2 \cdot (1+\log_3 h)$ and $11/6\cdot(1+\log_4{h})$, respectively, where $h$ is the largest entry in the intensity matrix. We illustrate the limitations of the specific approach used to obtain these two algorithms by proving a lower bound of $\frac{(2b-2)}{b}\cdot\log_b{h} + \frac{1}{b}$ on the approximation guarantee. Our third algorithm improves the approximation factor from $2 \cdot (\log D+1)$ to $24/13 \cdot (\log D+1)$, where $D$ is (roughly) the largest difference between consecutive elements of a row of the intensity matrix. Finally, experimentation with these algorithms shows that they perform well with respect to the optimum and outperform other approximation algorithms on 77% of the 122 test cases we consider, which include both real world and synthetic data.Comment: 18 page

Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping

We present a defect-engineering strategy to optimize the transport properties of the topological insulator Bi2Se3 to show a high bulk resistivity and clear quantum oscillations. Starting with a p-type Bi2Se3 obtained by combining Cd doping and a Se-rich crystal-growth condition, we were able to observe a p-to-n-type conversion upon gradually increasing the Se vacancies by post annealing. With the optimal annealing condition where a high level of compensation is achieved, the resistivity exceeds 0.5 Ohmcm at 1.8 K and we observed two-dimensional Shubnikov-de Haas oscillations composed of multiple frequencies in magnetic fields below 14 T.Comment: 7 pages, 6 figure

Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators

Three-dimensional (3D) topological insulators (TI) are novel quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The spin-helical Dirac surface states are expected to host exotic topological quantum effects and find applications in spintronics and quantum computation. The experimental realization of these ideas requires fabrication of versatile devices based on bulk-insulating TIs with tunable surface states. The main challenge facing the current TI materials exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which remains unsolved despite extensive efforts involving nanostructuring, chemical doping and electrical gating. Here we report a novel approach for engineering the band structure of TIs by molecular beam epitaxy (MBE) growth of (Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy (ARPES) and transport measurements show that the topological surface states exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1), indicating the robustness of bulk Z2 topology. Most remarkably, the systematic band engineering leads to ideal TIs with truly insulating bulk and tunable surface state across the Dirac point that behave like one quarter of graphene. This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new TI devices with well-established semiconductor technology.Comment: Minor changes in title, text and figures. Supplementary information adde

Ultra-low carrier concentration and surface dominant transport in Sb-doped Bi2Se3 topological insulator nanoribbons

A topological insulator is a new state of matter, possessing gapless spin-locking surface states across the bulk band gap which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state via electron transport measurement. Here we report surface state dominated transport in Sb-doped Bi2Se3 nanoribbons with very low bulk electron concentrations. In the nanoribbons with sub-10nm thickness protected by a ZnO layer, we demonstrate complete control of their top and bottom surfaces near the Dirac point, achieving the lowest carrier concentration of 2x10^11/cm2 reported in three-dimensional (3D) topological insulators. The Sb-doped Bi2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications.Comment: 5 pages, 4 figures, 1 tabl