The Nonduality of Motion and Rest: Sengzhao on the Change of Things

In his essay “Things Do Not Move,” Sengzhao (374?−414 CE), a prominent Chinese Buddhist philosopher, argues for the thesis that the myriad things do not move in time. This view is counter-intuitive and seems to run counter to the Mahayana Buddhist doctrine of emptiness. In this book chapter, I assess Sengzhao’s arguments for his thesis, elucidate his stance on the change/nonchange of things, and discuss related problems. I argue that although Sengzhao is keen on showing the plausibility of the thesis, he actually views the myriad things as both changing and unchanging and upholds the nonduality of motion and rest. In fact, the nonmoving thesis follows from the discernment that things change from moment to moment without there being any enduring stuff in the process. Among philosophical works that confer a higher ontological status on nonchange over change, Sengzhao’s essay is unique and well worth pondering

Biodegradable Polylactic Acid (PLA) Microstructures for Scaffold Applications

In this research, we present a simple and cost effective soft lithographic process to fabricate PLA scaffolds for tissue engineering. In which, the negative photoresist JSR THB-120N was spun on a glass subtract followed by conventional UV lithographic processes to fabricate the master to cast the PDMS elastomeric mold. A thin poly(vinyl alcohol) (PVA) layer was used as a mode release such that the PLA scaffold can be easily peeled off. The PLA precursor solution was then cast onto the PDMS mold to form the PLA microstructures. After evaporating the solvent, the PLA microstructures can be easily peeled off from the PDMS mold. Experimental results show that the desired microvessels scaffold can be successfully transferred to the biodegradable polymer PLA.Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing

The Origin of Radio Emission in Low-Luminosity Active Galactic Nuclei: Jets, Accretion Flows, or Both?

The low-luminosity active galactic nuclei in NGC 3147, NGC 4203, and NGC 4579 have been imaged at four frequencies with the Very Long Baseline Array. The galaxies are unresolved at all frequencies, with size upper limits of $10^3-10^4$ times the Schwarzschild radii of their central massive black holes. The spectral indices between 1.7 and 5.0 GHz range from 0.2 to 0.4; one and possibly two of the galaxies show spectral turnovers between 5.0 and 8.4 GHz. The high brightness temperatures ($> 10^9$ K) and relatively straight spectra imply that free-free emission and/or absorption cannot account for the slightly inverted spectra. Although the radio properties of the cores superficially resemble predictions for advection-dominated accretion flows, the radio luminosities are too high compared to the X-ray luminosities. We suggest that the bulk of the radio emission is generated by a compact radio jet, which may coexist with a low radiative efficiency accretion flow.Comment: To appear in ApJ (Letters). 4 page

The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device

We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a metal insulator semiconductor (M-I-S) diode. The VMISTT has significant advantages over the metal-oxide-semiconductor field-effect transistor in device scaling. In order to allow room-temperature operation of the VMISTT, the tunnel oxide has to be optimized for the metal-to-insulator barrier height and the current-voltage characteristics. We have grown TiO2 layers as the tunnel insulator by oxidizing 7 and 10 nm thick Ti metal films vacuum-evaporated on silicon substrates, and characterized the films by current-voltage and capacitance-voltage techniques. The quality of the oxide films showed variations, depending on the oxidation temperatures in the range of 450-550 degrees C. Fowler-Nordheim tunneling was observed at low temperatures at bias voltage of 2 V and above and a barrier height of approximately 0.4 eV was calculated. Leakage currents present were due Schottky-barrier emission at room-temperature, and hopping at liquid nitrogen temperature