Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices

: The influence of self-assembled short-period superlattices (SPSLs) on the structural and optical properties of InGaN/GaN nanowires (NWs) grown by PAMBE on Si (111) was investigated by STEM, EDXS, µ-PL analysis and k·p simulations. STEM analysis on single NWs indicates that in most of the studied nanostructures, SPSLs self-assemble during growth. The SPSLs display short-range ordering of In-rich and In-poor InxGa1-xN regions with a period of 2-3 nm that are covered by a GaN shell and that transition to a more homogenous InxGa1-xN core. Polarization- and temperature-resolved PL analysis performed on the same NWs shows that they exhibit a strong parallel polarized red-yellow emission and a predominantly perpendicular polarized blue emission, which are ascribed to different In-rich regions in the nanostructures. The correlation between STEM, µ-PL and k·p simulations provides better understanding of the rich optical emission of complex III-N nanostructures and how they are impacted by structural properties, yielding the significant impact of strain on self-assembly and spectral emission

Near-UV optical-cavities n Ga_2O_3 nanowires

In this Letter, we report optical confinement in the near-ultraviolet (near-UV) range in Ga2O3 nanowires (NWs) by distributed Bragg reflector (DBR) nanopatterned cavities. High-contrast DBRs, which act as the end mirrors of the cavities of the desired length, are designed and fabricated by focused ion beam etching. The resonant modes of the cavities are analyzed by micro-photoluminescence measurements, analytical models, and simulations, which show very good agreement between each other. Experimental reflectivities up to 50% are obtained over the 350-410 nm region for the resonances in this wavelength range. Therefore, Ga2O3 NW optical cavities are shown as good candidates for single-material-based near-UV light emitters

Origin of spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires

The luminescence of InxGa1 amp; 8722;xN nanowires NWs is frequently reported with large red shifts as compared to the theoretical value expected from the average In content. Both compositional fluctuations and radial built in fields were considered accountable for this effect, depending on the size, structure, composition, and surrounding medium of the NWs. In the present work, the emission properties of InGaN GaN NWs grown by plasma assisted molecular beam epitaxy are investigated in a comprehensive study combining ultraviolet Raman and photoluminescence spectroscopy PL on vertical arrays, polarization dependent PL on bundles of a few NWs, scanning transmission electron microscopy, energy dispersive X ray spectroscopy, and calculations of the band profiles. The roles of inhomogeneous In distribution and radial fields in the context of optical emission properties are addressed. The radial built in fields are found to be modest, with a maximum surface band bending below 350 meV. On the other hand, variations in the local In content have been observed that give rise to potential fluctuations whose impact on the emission properties is shown to prevail over band bending effects. Two luminescence bands with large positive and moderate negative polarization ratios of amp; 8776; 80 and amp; 8804; amp; 8722;60 , respectively, were observed. The red shift in the luminescence is associated with In rich inclusions in the NWs due to thermodynamic decomposition during growth. The negative polarization anisotropy is suggested to result from spontaneously formed superlattices in the In rich regions of the NWs. The NWs show a preferred orthogonal absorption due to the dielectric boundary conditions and highlight the extreme sensitivity of these structures towards light polarizatio