Near ultraviolet light emitting diode composed of n-GaN/ZnO coaxial nanorod heterostructures on a p-GaN layer

The authors report on the fabrication and characteristics of near ultraviolet nanorod light emitting diodes (LEDs) composed of n-GaN/ZnO nanorod heterostructures on p-GaN substrates. The nanorod LEDs consist of the vertically aligned n-GaN/ZnO coaxial nanorod arrays grown on a p-GaN substrate. The LEDs demonstrated strong near ultraviolet emission at room temperature. The nanorod LEDs were turned on a forward-bias voltage of 5 V, and exhibited a large light emitting area. From electroluminescent spectra, dominant emission peaks were observed at 2.96 and 3.24 eV for an applied current of 2 mA. The origins of the strong and large area light emission are also discussed in terms of enhanced carrier injection from n-GaN nanostructures to p-GaN substrates.This work was financially supported by the Korea Science and Engineering Foundation under the National Creative Research Initiative Project Contract No. R16-2004-004-01001-0 of the Ministry of Science and Technology, Korea

Fabrication and photoluminescent characteristics of ZnO/Mg0.2Zn0.8O coaxial nanorod single quantum well structures

The authors report on fabrication and photoluminescent (PL) properties of ZnO/Mg0.2Zn0.8O coaxial nanorod quantum structures with various quantum well and barrier layer thicknesses. Employing catalyst-free metal-organic vapor-phase epitaxy, coaxial nanorod single quantum well structures were fabricated by the alternate heteroepitaxial growth of ZnO and Mg0.2Zn0.8O layers over the entire surfaces of the ZnO nanorods with fine thickness controls of the layers. The quantum confinement effect of carriers in coaxial nanorod quantum structures depends on the Mg0.2Zn0.8O quantum barrier layer thickness as well as the thickness of the ZnO quantum well layer. The temperature-dependent PL characteristics of the coaxial nanorod quantum structures are also discussed.This work was financially supported under the National Creative Research Initiative Project by the KOSEF

Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metal-organic solution decomposition

Fatigue-free and highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2/Si(100) substrates using metalorganic solution decomposition. Films annealed above 500 degreesC were characterized by strong c-axis preferential growth with an in-plane alignment of grains. The BLT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization (2P(r)) and the coercive field (E-c) were in the range of 26-28 muC/cm(2) and 50-75 kV/cm, respectively. More importantly, the BLT capacitors did not show any significant fatigue up to 3.5x10(10) read/write switching cycles at a frequency of 1 MHz. (C) 2001 American Institute of Physics

ZnO Nanorod Biosensor for Highly Sensitive Detection of Specific Protein Binding

We report on the fabrication of electrical biosensors based on functionalized ZnO nanorod surfaces with biotin for highly sensitive detection of biological molecules. Due to the clean interface and easy surface modification, the ZnO nanorod sensors can easily detect streptavidin binding down to a concentration of 25 nM, which is more sensitive than previously reported one-dimensional (1D) nanostructure electrical biosensors. In addition, the unique device structure with a micrometer-scale hole at the center of the ZnO nanorod's conducting channel reduces the leakage current from the aqueous solution, hence enhancing device sensitivity. Moreover, ZnO nanorod field-effect-transistor (FET) sensors may open up opportunities to create many other oxide nanorod electrical sensors for highly sensitive and selective real-time detection of a wide variety of biomolecules.The authors thank Prof. Hee Cheul Choi at POSTECH for helpful discussion. This work was supported by the Korea Research Foundation Grant (KRF-2003-041-C00132)

GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications

We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the quantum dots obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single quantum dots, at near-infrared wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are ideal candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.Comment: 1 pages, 3 figure

Near ultraviolet light emitting diode composed of n-GaN∕ZnO coaxial nanorod heterostructures on a p-GaN layer

The authors report on the fabrication and characteristics of near ultraviolet nanorod light emitting diodes (LEDs) composed of n-GaN/ZnO nanorod heterostructures on p-GaN substrates. The nanorod LEDs consist of the vertically aligned n-GaN/ZnO coaxial nanorod arrays grown on a p-GaN substrate. The LEDs demonstrated strong near ultraviolet emission at room temperature. The nanorod LEDs were turned on a forward-bias voltage of 5 V, and exhibited a large light emitting area. From electroluminescent spectra, dominant emission peaks were observed at 2.96 and 3.24 eV for an applied current of 2 mA. The origins of the strong and large area light emission are also discussed in terms of enhanced carrier injection from n-GaN nanostructures to p-GaN substrates.This work was financially supported by the Korea Science and Engineering Foundation under the National Creative Research Initiative Project Contract No. R16-2004-004-01001-0 of the Ministry of Science and Technology, Korea

Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO (0 < x < 0.47) thin films

High-quality Zn1-xMgxO(0.00 less than or equal tox less than or equal to0.49) thin films were epitaxially grown at 500-650 degreesC on Al2O3(00.1) substrates using metalorganic vapor-phase epitaxy. By increasing the Mg content in the films up to 49 at. %, the c-axis constant of the films decreased from 5.21 to 5.14 Angstrom and no significant phase separation was observed as determined by x-ray diffraction measurements. Furthermore, the near-band-edge emission peak position showed blueshifts of 100, 440, and 685 meV at Mg content levels of 9, 29, and 49 at. %, respectively. Photoluminescent properties of the alloy films are also discussed.This research was sponsored by the KISTEP through the National Research Laboratory program, the Brain Korea 21 project, and the POSTECH BSRI Special Fund-2001

Time-resolved photoluminescence of the size-controlled ZnO nanorods

Size dependence of the time-resolved photoluminescence (TRPL) has been investigated for the ZnO nanorods fabricated by catalyst-free metalorganic chemical vapor deposition. The nanorods have a diameter of 35 nm and lengths in the range of 150 nm to 1.1 mum. The TRPL decay rate decreases monotonically as the length of the nanorods increases in the range of 150 to 600 nm. Decrease of the radiative decay rate of the exciton-polariton has been invoked to account for the results