Calculation and Analysis of the Instream Ecological Flow for the Irtysh River

AbstractInstream ecological flow is essential determinant of river health. In this paper, the monthly minimum flow calculation method, the (new) monthly frequency calculation method were applied to calculate and evaluate the minimum instream ecological flow and the optimal instream ecological flow for the Irtysh River, and the different criteria of instream ecological flow was calculated by the improved Tennant method. It is expected to provide a scientific basis for the reasonable allocation of water resource in Irtysh River basin by calculating the instream ecological flow

Theory Research on Evolution and Protection of River Ecosystem under the Influence of Human Activities

Source: ICHE Conference Archive - https://mdi-de.baw.de/icheArchive

Hydrological Variation Characteristics of Rivers in Humid Region: Oujiang River, China

AbstractOujiang River was selected as the case study, and a dataset of daily flow series at Xuren Station was used to explore the hydrologic characteristics of rivers in humid areas, by using the ‘Indicators of Hydrologic Alteration’ approach and ‘Range of Variability Approach’. Results showed that the overall alteration of the hydrological regime for Oujiang River belonged to the low alteration category, and some key eco-hydrological characteristics should be protected in certain key periods to maintain the integrality and health status of river ecosystems

Genome-wide DNA polymorphisms in two cultivars of mei (Prunus mume sieb. et zucc.)

BACKGROUND: Mei (Prunus mume Sieb. et Zucc.) is a famous ornamental plant and fruit crop grown in East Asian countries. Limited genetic resources, especially molecular markers, have hindered the progress of mei breeding projects. Here, we performed low-depth whole-genome sequencing of Prunus mume ‘Fenban’ and Prunus mume ‘Kouzi Yudie’ to identify high-quality polymorphic markers between the two cultivars on a large scale. RESULTS: A total of 1464.1 Mb and 1422.1 Mb of ‘Fenban’ and ‘Kouzi Yudie’ sequencing data were uniquely mapped to the mei reference genome with about 6-fold coverage, respectively. We detected a large number of putative polymorphic markers from the 196.9 Mb of sequencing data shared by the two cultivars, which together contained 200,627 SNPs, 4,900 InDels, and 7,063 SSRs. Among these markers, 38,773 SNPs, 174 InDels, and 418 SSRs were distributed in the 22.4 Mb CDS region, and 63.0% of these marker-containing CDS sequences were assigned to GO terms. Subsequently, 670 selected SNPs were validated using an Agilent’s SureSelect solution phase hybridization assay. A subset of 599 SNPs was used to assess the genetic similarity of a panel of mei germplasm samples and a plum (P. salicina) cultivar, producing a set of informative diversity data. We also analyzed the frequency and distribution of detected InDels and SSRs in mei genome and validated their usefulness as DNA markers. These markers were successfully amplified in the cultivars and in their segregating progeny. CONCLUSIONS: A large set of high-quality polymorphic SNPs, InDels, and SSRs were identified in parallel between ‘Fenban’ and ‘Kouzi Yudie’ using low-depth whole-genome sequencing. The study presents extensive data on these polymorphic markers, which can be useful for constructing high-resolution genetic maps, performing genome-wide association studies, and designing genomic selection strategies in mei

Study on the radon adsorption capability of low-background activated carbon

Radon is a significant background source in rare event detection experiments. Activated Carbon (AC) adsorption is widely used for effective radon removal. The selection of AC considers its adsorption capacity and radioactive background. In this study, using self-developed devices, we screened and identified a new kind of low-background AC from Qingdao Inaf Technology Company that has very high Radon adsorption capacity. By adjusting the average pore size to 2.3 nm, this AC demonstrates a radon adsorption capacity of 2.6 or 4.7 times higher than Saratech or Carboact activated carbon under the same conditions.Comment: 21pages, 7 figure

A new opportunity for the emerging tellurium semiconductor: making resistive switching devices

Abstract: The development of the resistive switching cross-point array as the next-generation platform for high-density storage, in-memory computing and neuromorphic computing heavily relies on the improvement of the two component devices, volatile selector and nonvolatile memory, which have distinct operating current requirements. The perennial current-volatility dilemma that has been widely faced in various device implementations remains a major bottleneck. Here, we show that the device based on electrochemically active, low-thermal conductivity and low-melting temperature semiconducting tellurium filament can solve this dilemma, being able to function as either selector or memory in respective desired current ranges. Furthermore, we demonstrate one-selector-one-resistor behavior in a tandem of two identical Te-based devices, indicating the potential of Te-based device as a universal array building block. These nonconventional phenomena can be understood from a combination of unique electrical-thermal properties in Te. Preliminary device optimization efforts also indicate large and unique design space for Te-based resistive switching devices

Strain-restricted transfer of ferromagnetic electrodes for constructing reproducibly superior-quality spintronic devices

Spintronic device is the fundamental platform for spin-related academic and practical studies. However, conventional techniques with energetic deposition or boorish transfer of ferromagnetic metal inevitably introduce uncontrollable damage and undesired contamination in various spin-transport-channel materials, leading to partially attenuated and widely distributed spintronic device performances. These issues will eventually confuse the conclusions of academic studies and limit the practical applications of spintronics. Here we propose a polymer-assistant strain-restricted transfer technique that allows perfectly transferring the pre-patterned ferromagnetic electrodes onto channel materials without any damage and change on the properties of magnetism, interface, and channel. This technique is found productive for pursuing superior-quality spintronic devices with high controllability and reproducibility. It can also apply to various-kind (organic, inorganic, organic-inorganic hybrid, or carbon-based) and diverse-morphology (smooth, rough, even discontinuous) channel materials. This technique can be very useful for reliable device construction and will facilitate the technological transition of spintronic study