MOKE investigation of silicide films ion-beam synthesized in single-crystal silicon

Magnetic-field-assisted ion-beam synthesis was used to produce thin magnetic films. Si wafers were implanted with 40 keV Fe + ions with a fluence of 3 × 10 17 cm -2 in the external magnetic field of 9.6 × 10 4 A/m. The samples were investigated by scanning magneto-optical Kerr effect magnetometry, inductive magnetometry and reflection high-energy electron diffraction. The main synthesized phase was ferromagnetic Fe 3Si. In some regions of the samples the deviations of the easy magnetic axis near the applied magnetic field were revealed. These local changes can be caused by various reasons: the presence of mechanical stresses in a silicon substrate during the ion bombardment, the appearance of temperature gradients, inhomogeneous sputtering and the appearance of small magnetic fields in the chamber of the accelerator. © 2011 Elsevier B.V. All rights reserved

Trapping and desorption of hydrogen isotopes under irradiation of zirconium by deuterium atoms of thermal energies

© 2016 Elsevier LtdThe results on trapping and desorption of hydrogen isotopes under irradiation of zirconium by deuterium atoms of thermal energies are presented. It is shown that the addition of oxygen to the operating gas during the irradiation causes the increase of the oxide layer thickness, the amount of hydroxyl groups in it and deuterium trapping in zirconium. Accelerated transport of deuterium atoms through the oxide layer saturated by hydroxyl groups is observed. Mechanisms of trapping and desorption of hydrogen isotopes and the role of oxygen in these processes are discussed

Change in the sign of the Kerr effect in ion-beam-synthesized Fe3Si films

Ion-beam-synthesized Fe3Si thin films are studied using the magneto-optical Kerr effect, ferro-magnetic resonance, electron diffraction, and Auger spectroscopy. A change in the direction of rotation of the plane-polarized light as a function of film-synthesis conditions is discovered when the meridional Kerr effect is recorded. It is shown that the observed effect is related to the presence of thin interference films with different thicknesses on the surfaces of the magnetic layers. © Pleiades Publishing, Ltd., 2014

Trapping and desorption of hydrogen isotopes under irradiation of zirconium by deuterium atoms of thermal energies

© 2016 Elsevier Ltd. The results on trapping and desorption of hydrogen isotopes under irradiation of zirconium by deuterium atoms of thermal energies are presented. It is shown that the addition of oxygen to the operating gas during the irradiation causes the increase of the oxide layer thickness, the amount of hydroxyl groups in it and deuterium trapping in zirconium. Accelerated transport of deuterium atoms through the oxide layer saturated by hydroxyl groups is observed. Mechanisms of trapping and desorption of hydrogen isotopes and the role of oxygen in these processes are discussed

Optical properties of ZnO and Al2O3 implanted with silver ions

ZnO and Al2O3 samples implanted with 30-keV silver ions with fluences in the interval (0.25-1.00) × 1017 ions/cm2 are studied by the method of optical photometry in the visible part of the spectrum. The optical transmission spectra of the implanted samples exhibit a selective band associated with surface plasmon resonance absorption of silver nanoparticles. The intensity of this band nonmonotonically depends on the implantation fluence. The silver ion depth distribution in the samples is calculated. It is shown that the non-monotonicity observed in experiments is due to an increase in the substrate sputtering ratio with increasing implantation fluence. It is found that vacuum thermal annealing of the implanted Al2O3 layers up to 700°C causes a considerable narrowing of the plasmon absorption bandwidth without a tangible change in its intensity. At higher annealing temperatures, the plasmon absorption band broadens and its intensity drops. Annealing of the ZnO films under such conditions causes their complete vaporization. © 2014 Pleiades Publishing, Ltd

Magnetic and Mössbauer effect studies of ZnO thin film implanted with iron ions to high fluence

© Published under licence by IOP Publishing Ltd.We present the results of magnetic and Mössbauer effect studies of zinc oxide thin film obtained by RF magnetron sputtering and implanted with 40 keV iron ions to a fluence of 1.5•1017 ion/cm2. As-implanted and post-annealed sample shows ferromagnetic properties at room temperature and consists of paramagnetic and ferromagnetic phases according to Mössbauer spectroscopy

On the question of structure of ZnO thin films formed by IBAD and subsequently implanted with silver ions

© 2018 Institute of Physics Publishing. All rights reserved. Nanocrystalline ZnO thin films with a thickness of ∼ 235 nm were synthesized by ion beam-assisted deposition (IBAD) technique using a metal target of zinc and oxygen (O2) as a reactive gas. The near-surface region of the synthesized films was subsequently implanted with 30 keV Ag+ ions in the fluence range of (0.25-1)×1017 ion/cm2 at high ion current density of 12 μA/cm2. The structure parameters and morphology of as-deposited and subsequently implanted with silver ions ZnO films were investigated by X-ray diffraction and scanning electron microscopy techniques. It was found that the as-deposited ZnO films have inhomogeneous structure, which consists of nanocrystallites and disordered amorphous phase. The nanocrystallites of the obtained ZnO thin films have values of lattice parameters higher than for a bulk ZnO. Subsequent implantation with silver ions leads to a significant radiation heating and microstress relaxation of the film as well as to an increase in the size of nanocrystallites due to the amorphous phase

Synthesis and properties of the molybdenum and tungsten disulfide thin films

© Published under licence by IOP Publishing Ltd.In the paper results of thin film synthesis and primary characterization of molybdenum and tungsten disulfides are presented. The synthesis is performed by means of the high-temperature sulfurization of the metallic Mo and W films in the flow of argon. Chemical and phase compositions and morphology of thin films are reported. Optical transmission and Raman spectra are presented and discussed

Spectral ellipsometry of cobalt-ions implanted silicon surface

© (2015) Trans Tech Publications, Switzerland. Monocrystalline silicon wafers implanted by cobalt ions with energy of 40 keV at a fluence range from 6.6×1012 to 2.5×1017 Co+-ion/cm2 were investigated by optical spectroscopic ellipsometry. By comparison of experimental data with modeling it is shown that the ellipsometric measurements are accurate and reliable method for monitoring of a low-dose ion implantation process