5 research outputs found
Relaxation of Electron Spin during High-Field Transport in GaAs Bulk
A semiclassical Monte Carlo approach is adopted to study the multivalley spin
depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor,
in a wide range of lattice temperature ( K) and doping density
(cm). The decay of the initial non-equilibrium spin
polarization of the conduction electrons is investigated as a function of the
amplitude of the driving static electric field, ranging between 0.1 and 6
kV/cm, by considering the spin dynamics of electrons in both the and
the upper valleys of the semiconductor. Doping density considerably affects
spin relaxation at low temperature and weak intensity of the driving electric
field. At high values of the electric field, the strong spin-orbit coupling of
electrons in the -valleys significantly reduces the average spin
polarization lifetime, but, unexpectedly, for field amplitudes greater than 2.5
kV/cm, the spin lifetime increases with the lattice temperature. Our numerical
findings are validated by a good agreement with the available experimental
results and with calculations recently obtained by a different theoretical
approach.Comment: 14 pages, 6 figure