Asymmetrical mechanical design for bouncing suppression in RF-MEMS switches

International audienceContact bouncing is among the most critical phenomenon reducing RF-MEMS reliability. This paper shows that very simple changes in switch design permit suppression of contact bouncing upon closure. The proposed asymmetrical design gets two dimples in contact with substrate electrodes successively, instead of simultaneously. This helps the dissipation of kinetic energy and prevents contact re-opening. On top of preliminary ageing prevention, the structure can handle more actuation voltage and then have more contact force compared to symmetrical structures. Experimental demonstration is presented on metal contact switches with more than 2mN contact force, one symmetrical with significant bouncing and the other asymmetrical without any bouncing clearly show the relevance of the approach

MEMS Capacitif Packagé

National audienc

A 3-bit RF MEMS Aperture Tunable PIFA Antenna

International audienc

Low-Loss Distributed 2-bit RF MEMS Phase Shifter for 60GHz Applications

International audienc

High Power Handling Low-Voltage RF-MEMS Switched Capacitors

International audienc

A 2 pole tunable bandpass filter using commercial digitally tunable capacitor

International audienc

Commutateurs planaires RF/ micro-ondes à base de matériaux à changement de phase type Ge2Sb2Te5

National audienceNous présentons la fabrication et la caractérisation de nouveaux commutateurs RF/ micro-ondes basés sur l'intégration d'un matériau à changement de phase (MCP), à savoir le Ge2Sb2Te5 (GST). Le dispositif de type ohmique présente un changement réversible de résistivité (plusieurs ordres de grandeur) quand le matériau passe d'un état amorphe à un état cristallin sous l'effet d'un sti-mulus thermique ou électrique. Nous avons étudié les pro-priétés RF ainsi que la tenue en puissance de commuta-teurs planaires intégrant des motifs de GST de 10 µm de longueur

A quasi bistable RF-MEMS switched capacitor

International audienceThis paper presents a novel concept for the realization of RF-MEMS switched capacitors. The proposed device uses a tilting metal beam combined with a non-linear electrostatic force generated by a DC voltage to maintain the device in two stable mechanical positions. Fabricated devices with relatively simple processing exhibit very low loss and a capacitive contrast of 8.5. Actuation requires only voltage pulses, toggling the device from one position to the other. Actuation voltages, both static and pulsed are in good agreement with simple mechanical modeling

A 2 pole tunable bandpass filter using high power silicon on sapphire digitally tunable capacitors

International audienc

filtre passe-bande accordable à 2 pôles utilisant des commutateurs RF-MEMS

National audienc